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27C16AFT-20TS PDF预览

27C16AFT-20TS

更新时间: 2024-11-10 22:44:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
8页 68K
描述
16K (2K x 8) CMOS EEPROM

27C16AFT-20TS 数据手册

 浏览型号27C16AFT-20TS的Datasheet PDF文件第2页浏览型号27C16AFT-20TS的Datasheet PDF文件第3页浏览型号27C16AFT-20TS的Datasheet PDF文件第4页浏览型号27C16AFT-20TS的Datasheet PDF文件第5页浏览型号27C16AFT-20TS的Datasheet PDF文件第6页浏览型号27C16AFT-20TS的Datasheet PDF文件第7页 
28C16A  
16K (2K x 8) CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
A7  
A6  
• 1  
2
24 Vcc  
23 A8  
• Fast Read Access Time—150 ns  
• CMOS Technology for Low Power Dissipation  
- 30 mA Active  
A6  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
NC 12  
I/O0 13  
5
6
7
8
9
29 A8  
28 A9  
A5  
3
22 A9  
A4  
4
21 WE  
20 OE  
19 A10  
18 CE  
17 I/O7  
16 I/O6  
15 I/O5  
14 I/O4  
13 I/O3  
27 NC  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
A3  
5
- 100 µA Standby  
A2  
6
• Fast Byte Write Time—200 µs or 1 ms  
• Data Retention >200 years  
A1  
7
A0  
8
4
I/O0  
I/O1  
I/O2  
9
• High Endurance - Minimum 10 Erase/Write Cycles  
10  
11  
• Automatic Write Operation  
- Internal Control Timer  
VSS 12  
- Auto-Clear Before Write Operation  
- On-Chip Address and Data Latches  
• Data polling  
• Chip Clear Operation  
• Enhanced Data Protection  
- VCC Detector  
• Pin 1 indicator on PLCC on top of package  
OE  
NC  
A9  
1
2
3
4
5
6
7
28 A10  
27  
CE  
26 I/07  
25 I/06  
24 I/05  
23 I/04  
22 I/03  
A8  
NC  
WE  
Vcc  
- Pulse Filter  
- Write Inhibit  
NC  
NC  
8
9
21 Vss  
20 I/02  
19 I/01  
18 I/00  
17 A0  
16 A1  
15 A2  
A7 10  
A6 11  
A5 12  
A4 13  
A3 14  
• Electronic Signature for Device Identification  
• 5-Volt-Only Operation  
• Organized 2Kx8 JEDEC Standard Pinout  
• 24-pin Dual-In-Line Package  
• 32-pin PLCC Package  
• 28-pin Thin Small Outline Package (TSOP)  
8x20mm  
• 28-pin Very Small Outline Package (VSOP)  
8x13.4mm  
OE  
NC  
A9  
A8  
NC  
WE  
22  
23  
24  
25  
26  
27  
A10  
CE  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
VSS  
I/O2  
I/O1  
I/O0  
A0  
28  
1
VCC  
NC  
2
3
4
5
6
7
NC  
A7  
A6  
A5  
A4  
A3  
• Available for Extended Temperature Ranges:  
- Commercial: 0˚C to +70˚C  
- Industrial: -40˚C to +85˚C  
A1  
A2  
8
BLOCK DIAGRAM  
DESCRIPTION  
I/O0  
I/O7  
The Microchip Technology Inc. 28C16A is a CMOS 16K  
non-volatile electrically Erasable PROM. The 28C16A  
is accessed like a static RAM for the read or write  
cycles without the need of external components. Dur-  
ing a “byte write”, the address and data are latched  
internally, freeing the microprocessor address and data  
bus for other operations. Following the initiation of  
write cycle, the device will go to a busy state and auto-  
matically clear and write the latched data using an  
internal control timer. To determine when a write cycle  
is complete, the 28C16A uses Data polling. Data poll-  
ing allows the user to read the location last written to  
when the write operation is complete. CMOS design  
and processing enables this part to be used in systems  
where reduced power consumption and reliability are  
required. A complete family of packages is offered to  
provide the utmost flexibility in applications.  
VSS  
Data Protection  
VCC  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
OE  
Input/Output  
Buffers  
WE  
Auto Erase/Write  
Timing  
Data  
Poll  
Program Voltage  
Generation  
A0  
Y
Y Gating  
Decoder  
L
a
t
c
h
e
s
16K bit  
X
Decoder  
Cell Matrix  
A10  
1996 Microchip Technology Inc.  
DS11125G-page 1  
This document was created with FrameMaker 4 0 4  

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