Datasheet > 25N90

25N90

更新时间： 2024-01-22 19:42:49

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	118K
描述
HiPerFET Power MOSFETs

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数据手册

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25N90 数据手册

HiPerFET^TMPower MOSFETs

V_DSSI_DSSR_DS(on)

t_rr

900 V 26 A 0.30 W 250 ns

900 V 25 A 0.33 W 250 ns

IXFK/IXFX26N90

IXFK/IXFX25N90

Single MOSFET Die

Preliminary data sheet

Symbol

TestConditions

MaximumRatings

PLUS 247^TM(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

900

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

26N90

25N90

26N90

25N90

26N90

25N90

104

100

TO-264 AA (IXFK)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

E_AS

T_C= 25°C

G = Gate

D = Drain

S = Source

TAB = Drain

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

Features

P_D

T_J

T_C= 25°C

560

• Internationalstandardpackages

• Low R_{DS (on)}HDMOS^TMprocess

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

• Lowpackageinductance

- easy to drive and to protect

• Fastintrinsicrectifier

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M_d

Mountingtorque

TO-264

0.4/6

Nm/lb.in.

Weight

PLUS 247

TO-264

Applications

• DC-DC converters

• Batterychargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3mA

900

3.0

• ACmotorcontrol

• Temperatureandlightingcontrols

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

5.0

V_GS= ±20 V, V_DS= 0

±200 nA

100 mA

Advantages

• PLUS 247^TMpackage for clip or spring

mounting

I_DSS

V_DS= 0.8 •V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

• Space savings

• Highpowerdensity

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Note 1

26N90

25N90

0.3

0.33

IXYS reserves the right to change limits, test conditions, and dimensions.

98553D(9/99)

1 - 4

12 3 4

中文翻译

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