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25LC160D-E/ST16KVAO PDF预览

25LC160D-E/ST16KVAO

更新时间: 2024-11-26 07:16:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
30页 485K
描述
EEPROM, 2KX8, Serial, CMOS, PDSO8

25LC160D-E/ST16KVAO 技术参数

生命周期:Active包装说明:TSSOP-8
Reach Compliance Code:compliant风险等级:5.49
最大时钟频率 (fCLK):10 MHzJESD-30 代码:R-PDSO-G8
长度:4.4 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL筛选级别:AEC-Q100; TS 16949
座面最大高度:1.1 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:3 mm
最长写入周期时间 (tWC):5 ms

25LC160D-E/ST16KVAO 数据手册

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25AA160C/D, 25LC160C/D  
16K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25LC160C  
25AA160C  
25LC160D  
25AA160D  
2.5-5.5V  
1.8-5.5V  
2.5-5.5V  
1.8-5.5V  
16 Byte  
16 Byte  
32 Byte  
32 Byte  
I,E  
I
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
I,E  
I
Description:  
Features:  
The Microchip Technology Inc. 25AA160C/D,  
25LC160C/D (25XX160C/D*) are 16 Kbit Serial  
Electrically Erasable PROMs. The memory is accessed  
• Max. Clock 10 MHz  
• Low-Power CMOS Technology:  
- Max. write current: 5 mA at 5.5V  
- Read current: 5 mA at 5.5V, 10 MHz  
- Standby current: 5 uA at 5.5V  
• 2048 x 8-bit Organization  
via  
a
simple Serial Peripheral Interface (SPI)  
compatible serial bus. The bus signals required are a  
clock input (SCK) plus separate data in (SI) and data  
out (SO) lines. Access to the device is controlled  
through a Chip Select (CS) input.  
• 16-Byte Page (‘C’ version devices)  
• 32-Byte Page (‘D’ version devices)  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
• Self-Timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection:  
- Protect none, 1/4, 1/2 or all of array  
• Built-In Write Protection:  
The 25XX160C/D is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packaging including 8-lead MSOP, TSSOP, and 2x3  
TDFN. All packages are Pb-free and RoHS compliant.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential Read  
Package Types (not to scale)  
• High Reliability:  
- Endurance: > 1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Temperature Ranges Supported:  
PDIP/SOIC  
(P, SN)  
TSSOP/MSOP  
(ST, MS)  
1
2
3
4
8
7
6
5
V
CC  
CS  
SO  
WP  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
- Industrial (I):  
-40°C to +85°C  
V
SS  
- Automotive (E):  
-40°C to +125°C  
VSS  
• Pb-Free and RoHS Compliant  
TDFN  
(MN)  
1
2
3
4
CS  
SO  
8
7
6
5
VCC  
HOLD  
SCK  
SI  
WP  
VSS  
*25XX160C/D is used in this document as a generic part  
number for the 25AA160C/D, 25LC160C/D devices.  
© 2009 Microchip Technology Inc.  
DS22150A-page 1  

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