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25LC160DT-H/SN PDF预览

25LC160DT-H/SN

更新时间: 2024-11-21 06:22:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 333K
描述
8K-256K SPI Serial EEPROM High Temp Family Data Sheet

25LC160DT-H/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:3A001.A.2.A
HTS代码:8542.32.00.51Factory Lead Time:29 weeks
风险等级:5.47Is Samacsys:N
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:150 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):6 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25LC160DT-H/SN 数据手册

 浏览型号25LC160DT-H/SN的Datasheet PDF文件第2页浏览型号25LC160DT-H/SN的Datasheet PDF文件第3页浏览型号25LC160DT-H/SN的Datasheet PDF文件第4页浏览型号25LC160DT-H/SN的Datasheet PDF文件第5页浏览型号25LC160DT-H/SN的Datasheet PDF文件第6页浏览型号25LC160DT-H/SN的Datasheet PDF文件第7页 
25LC080C 25LC320A  
25LC080D 25LC640A  
25LC160C 25LC128  
25LC160D 25LC256  
8K-256K SPI Serial EEPROM High Temp Family Data Sheet  
Features:  
Description:  
• Max. Clock 5 MHz  
Microchip Technology Inc. 25LCXXX* devices are Mid-  
density 8 through 256 Kbit Serial Electrically Erasable  
PROMs (EEPROM). The devices are organized in  
blocks of x8-bit memory and support the Serial Periph-  
eral Interface (SPI) compatible serial bus architecture.  
Byte-level and page-level functions are supported.  
• Low-power CMOS Technology:  
- Max. Write Current: 5 mA at 5.5V, 5 MHz  
- Read Current: 5 mA at 5.5V, 5 MHz  
- Standby Current: 10 μA at 5.5V  
• 1024 x 8 through 32768 x 8-bit Organization  
• Byte and Page-level Write Operations  
• Self-timed Erase and Write Cycles (6 ms max.)  
• Block Write Protection:  
The bus signals required are a clock input (SCK) plus  
separate data in (SI) and data out (SO) lines. Access to  
the device is controlled through a Chip Select (CS)  
input.  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
The 25LCXXX is available in a standard 8-lead SOIC  
package. The package is Pb-free.  
• Sequential Read  
• High Reliability:  
- Endurance: >1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Package Types (not to scale)  
SOIC  
(SN)  
Temperature Range Supported:  
- Extended (H):  
-40°C to +150°C  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
• Package is Pb-free and RoHS Compliant  
Pin Function Table  
VSS  
Name  
Function  
Chip Select Input  
CS  
SO  
Serial Data Output  
Write-Protect  
Ground  
WP  
VSS  
SI  
Serial Data Input  
Serial Clock Input  
Hold Input  
SCK  
HOLD  
VCC  
Supply Voltage  
*25LCXXX is used in this document as a generic part number for the 25 series devices.  
© 2009 Microchip Technology Inc.  
Preliminary  
DS22131C-page 1  

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