Datasheet > 25HFR10M

25HFR10M

更新时间： 2024-09-16 06:25:23

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
1页	75K
描述
SILICON POWER DIODE

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数据手册

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25HFR10M 数据手册

25 F / 25 FR

NAINA

SILICON POWER DIODE

DO-5

FEATURES

•

All Diffused Series

25 F/ FR

Available in Normal & Reverse Polarity

Industrial Grade

POLARITY

Ø 4.0

Available In Avalanche Characteristic

* Available in metric and UNF thread

ELECTRICALSPECIFICATIONS

Reverse

Normal

17 A/F

11.5

M8 x 1.25

25F/FR

F(AV)

Maximum Average Forward

25A

1.25V

400 A

150A

Ø 8.0

Current T=140 C

V_FM

I_FSM

I_FRM

Maximum peak forward

voltage drop @ Rated I_F(AV)

Maximum peak one cycle

(non-rep) surge current 10 m sec

Maximum peak repetitive

surge current®

POLARITY

Reverse

Normal

17 A/F

800A Sec

I tMaximum I t rating (non-rep.)

11.5

M 8 x 1.25

for 5 to 10 m sec.

THERMALMECHANICALSPECIFICATIONS

θJC

Maximum thermal resistance Junction to case

1.5⁰C/W

Operating Junction Temp.

Storage temperature

Mounting torque

(Non-lubricated threads)

Approx, weight

-65⁰C to 150⁰C

0.14 M-kg min,

0.17 M-kg max

7 gms.

Tstg

ELECTRICALRATINGS

TYPE

NUMBER 25F/FR

100

120

140

160

VRRM

Max. repetitive peak reverse

voltage (v)

100

200 400 600

800 1000

1200 1400 1600

840 980 1120

1200 1400 1600

VR(RMS) Max. R.M.S. reverse voltage (V)

140 280 420

560

700

Max. D.C. Blocking Voltage (V)

100

200 400

80 160 240

150 150 150

800 1000

Recommended R.M.S. working

Voltage(v)

320

150

400

150

480

150

560

150

640

150

iR(AV)

Max. Average reverse leakage

150

current @ VRMM Tc 25⁰C uA

NAINA SEMICONDUCTOR LTD.

D95,SECTOR 63 NOIDA(INDIA)

e-mail : sales@nainasemi.com web site : www.nainasemi.com

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