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25ACI12T4V2 PDF预览

25ACI12T4V2

更新时间： 2024-11-07 07:37:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
6页 1417K
描述
Three-phase inverter intelligent

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25ACI12T4V2 数据手册

 浏览型号25ACI12T4V2的Datasheet PDF文件第2页浏览型号25ACI12T4V2的Datasheet PDF文件第3页浏览型号25ACI12T4V2的Datasheet PDF文件第4页浏览型号25ACI12T4V2的Datasheet PDF文件第5页浏览型号25ACI12T4V2的Datasheet PDF文件第6页 
SKiiP 25ACI12T4V2  
Absolute Maximum Ratings (Ts=25°C, unless otherwise specified)  
Symbol  
Parameter  
Conditions  
Values  
Units  
IGBT - Inverter  
VCES  
1200  
61  
V
A
T = 175 °C  
j
TS = 25 °C  
TS = 70 °C  
IC  
50  
A
ICnom  
ICRM  
tpsc  
50  
A
ICRM = 3xICnom  
VCC = 600V  
150  
≤10  
A
T=150°C  
j
µs  
MiniSKiiP® AC IPM  
Tj(max)  
Junction temperature  
-40 ... +175  
°C  
Diode  
Three-phase inverter intelligent  
power module  
T=175°C  
IF  
Ts= 25 °C  
Ts= 70 °C  
57  
A
j
45  
50  
A
A
IFnom  
IFRM  
IFRM = 3xICnom  
T < T  
150  
A
A
j
j(max)  
tp = 10 ms, sin 180°, T j = 150 °C  
IFSM  
265  
SKiiP 25ACI12T4V2  
Tj(max)  
Junction temperature  
-40 … +175  
°C  
Driver  
VCC  
VBx  
Data sheet status: preliminary  
Applied between VCC-VSS, VCCL-VSSL  
Applied between VB1-U, VB2-V, VB3-W  
17  
17  
V
V
Voltage to VSS, tp<500ns  
-3 … 1200  
V
VSx  
Applied between HIN1, LIN1, HIN2, LIN2, HIN3,  
LIN3 - VSS  
Vin  
VSS-0.3 … VCC+0.3  
Features  
• One screw assembly of driver,  
module and heat sink  
V
VoErr  
Applied between /ERROUT-VSS  
Between /ERROUT-VSS  
VSS-0.3 … VCC+0.3  
mA  
Imax(EO)  
10  
VSS-0.3 … VCC+0.3  
20  
• Solder-free assembly of power,  
control and auxiliary contacts  
• Trench-Field-Stop IGBT  
• Robust and soft freewheeling diodes  
in CAL technology  
• Latch-up free SOI driver IC  
• Advanced level shifter technology  
• Bootstrap power supply technology  
• Matched propagation delay for all  
channels  
VITRIP  
fmax  
Applied between ITRIP-VSS  
V
kHz  
Temperature  
Tc  
-40 … +125  
-40 … +125  
°C  
°C  
Tstg  
System  
Visol  
AC, rms, f=60Hz, t=1min, all pins to heat sink  
Per power terminal (20A / Spring)  
2500  
20  
V
A
ItRMS  
• Overcurrent shut-down via current  
sensing  
Electrical Characteristics (Ts=25°C, unless otherwise specified)  
Limits  
typ.  
• Interlock logic for shoot-through  
prevention  
• Common shut-down signal  
• Undervoltage lockout for all channels  
with hysteresis band  
Symbol  
IGBT  
Parameter  
Conditions  
min.  
max.  
Units  
IC = 50 A  
VCEsat  
T = 25 °C  
j
1.85  
2.25  
0.8  
0.7  
21  
2.05  
2.45  
0.9  
0.8  
23  
V
V
VGE = 15 V  
T = 150 °C  
j
• Integrated temperature sensor (NTC)  
• RoHS compliant  
VCEO  
rCE  
T = 25 °C  
j
V
T = 150 °C  
j
V
VGE = 15 V  
T = 25 °C  
j
mꢀ  
mꢀ  
mA  
T = 150 °C  
j
31  
33  
Typical Applications  
• Industrial- & consumer drives  
• Power supplies (SMPS & UPS)  
• Industrial air conditioner  
VGE = 0 V  
ICES  
T = 25 °C  
j
0.3  
VCE = 600 V  
VCC = 600V  
Eon  
Eoff  
td(on)  
tr  
T = 150 °C  
j
7.2  
5.6  
mJ  
mJ  
ns  
Ic = 50 A  
T = 150 °C  
j
Rgon/Rgoff = 4.7 ꢀ  
di/dton = 1061 A/µs  
di/dtoff = 693 A/µs  
T = 150 °C  
j
1065  
50  
Remarks  
T = 150 °C  
j
ns  
td(off)  
tr  
T = 150 °C  
j
1670  
252  
0.84  
ns  
T = 150 °C  
j
ns  
Rth(j-s)  
per IGBT  
K/W  
Diode  
IF = 50 A  
VF = VEC  
T = 25 °C  
j
2.25  
2.2  
1.3  
0.9  
19  
2.55  
2.5  
1.5  
1.1  
21  
V
V
VGE = 0 V (Chiplevel)  
T = 150 °C  
j
VF0  
rF  
T = 25 °C  
j
V
T = 150 °C  
j
V
T = 25 °C  
j
mꢀ  
mꢀ  
mJ  
µC  
A
T = 150 °C  
j
26  
28  
Err  
IF = 50 A  
T = 150 °C  
j
3
diF/dt = -1479 A/µs  
Vcc = 600 V, VGE = 0 V  
Qrr  
T = 150 °C  
j
8.3  
56  
IRRM  
Rth(j-s)  
T = 150 °C  
j
per Diode  
0,99  
K/W  
ACI  
Page 1 / 6  
09.08.2010  
© by SEMIKRON  
123456

中文翻译

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