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25AA128T-I/SN PDF预览

25AA128T-I/SN

更新时间: 2024-02-18 14:09:42
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 536K
描述
128K SPI Bus Serial EEPROM

25AA128T-I/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:6 weeks
风险等级:5.57Is Samacsys:N
最大时钟频率 (fCLK):10 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25AA128T-I/SN 数据手册

 浏览型号25AA128T-I/SN的Datasheet PDF文件第1页浏览型号25AA128T-I/SN的Datasheet PDF文件第2页浏览型号25AA128T-I/SN的Datasheet PDF文件第3页浏览型号25AA128T-I/SN的Datasheet PDF文件第5页浏览型号25AA128T-I/SN的Datasheet PDF文件第6页浏览型号25AA128T-I/SN的Datasheet PDF文件第7页 
25AA128/25LC128  
TABLE 1-2:  
AC CHARACTERISTICS (CONTINUED)  
Industrial (I):  
Automotive (E): TA = -40°C to +125°C  
TA = -40°C to +85°C  
VCC = 1.8V to 5.5V  
VCC = 2.5V to 5.5V  
AC CHARACTERISTICS  
Param.  
Sym.  
Characteristic  
Min.  
Max.  
Units  
Test Conditions  
No.  
17  
THH  
HOLD Hold Time  
20  
40  
80  
ns  
ns  
ns  
4.5V Vcc 5.5V  
2.5V Vcc < 4.5V  
1.8V Vcc < 2.5V  
18  
19  
THZ  
THV  
HOLD Low to Output  
High-Z  
30  
60  
160  
ns  
ns  
ns  
4.5V Vcc 5.5V(Note 1)  
2.5V Vcc < 4.5V(Note 1)  
1.8V Vcc < 2.5V(Note 1)  
HOLD High to Output  
Valid  
30  
60  
160  
ns  
ns  
ns  
4.5V Vcc 5.5V  
2.5V Vcc < 4.5V  
1.8V Vcc < 2.5V  
20  
21  
TWC  
Internal Write Cycle Time  
Endurance  
5
ms  
(NOTE 2)  
1M  
E/W (NOTE 3)  
Cycles  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is  
complete.  
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific  
application, please consult the Total Endurance™ Model which can be obtained from our web site:  
www.microchip.com.  
TABLE 1-3:  
AC Waveform:  
VLO = 0.2V  
AC TEST CONDITIONS  
VHI = VCC - 0.2V  
(Note 1)  
(Note 2)  
VHI = 4.0V  
CL = 50 pF  
Timing Measurement Reference Level  
Input  
0.5 VCC  
0.5 VCC  
Output  
Note 1: For VCC 4.0V  
2: For VCC > 4.0V  
DS21831C-page 4  
© 2007 Microchip Technology Inc.  

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