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25AA128XT-I/ST PDF预览

25AA128XT-I/ST

更新时间: 2024-11-09 05:56:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 400K
描述
128K SPI Bus Serial EEPROM

25AA128XT-I/ST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:6 weeks
风险等级:5.57Is Samacsys:N
最大时钟频率 (fCLK):10 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25AA128XT-I/ST 数据手册

 浏览型号25AA128XT-I/ST的Datasheet PDF文件第2页浏览型号25AA128XT-I/ST的Datasheet PDF文件第3页浏览型号25AA128XT-I/ST的Datasheet PDF文件第4页浏览型号25AA128XT-I/ST的Datasheet PDF文件第5页浏览型号25AA128XT-I/ST的Datasheet PDF文件第6页浏览型号25AA128XT-I/ST的Datasheet PDF文件第7页 
25AA128/25LC128  
128K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25LC128  
25AA128  
2.5-5.5V  
1.8-5.5V  
64 Byte  
64 Byte  
I,E  
I
P, SN, ST, MF  
P, SN, ST, MF  
Features  
Description  
• Max. Clock 10 MHz  
The Microchip Technology Inc. 25AA128/25LC128  
(25XX128*) are 128k-bit Serial Electrically Erasable  
PROMs. The memory is accessed via a simple Serial  
Peripheral Interface (SPI) compatible serial bus. The  
bus signals required are a clock input (SCK) plus sep-  
arate data in (SI) and data out (SO) lines. Access to the  
device is controlled through a Chip Select (CS) input.  
• Low-power CMOS Technology  
- Max. Write Current: 5 mA at 5.5V, 10 MHz  
- Read Current: 5 mA at 5.5V, 10 MHz  
- Standby Current: 5 μA at 5.5V  
• 16,384 x 8-bit Organization  
• 64 Byte Page  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused,  
transitions on its inputs will be ignored, with the  
exception of Chip Select, allowing the host to service  
higher priority interrupts.  
• Self-timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection  
The 25XX128 is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packaging including 8-lead DFN and 8-lead TSSOP.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential Read  
Package Types (not to scale)  
• High Reliability  
- Endurance: 1,000,000 erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Temperature Ranges Supported;  
PDIP/SOIC  
(P, SN)  
TSSOP  
(ST)  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS  
SO  
WP  
V
CC  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
- Industrial (I):  
-40°C to +85°C  
VSS  
VSS  
- Automotive (E):  
-40°C to +125°C  
• Pb-free and RoHS Compliant  
DFN  
X-Rotated TSSOP  
(X/ST)  
Pin Function Table  
(MF)  
1
2
3
4
CS  
8
7
6
5
VCC  
Name  
Function  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
V
CC  
SO  
WP  
VSS  
HOLD  
SCK  
SI  
CS  
SO  
Chip Select Input  
Serial Data Output  
Write-Protect  
CS  
SO  
VSS  
WP  
WP  
VSS  
SI  
Ground  
Serial Data Input  
Serial Clock Input  
Hold Input  
SCK  
HOLD  
VCC  
Supply Voltage  
* 25XX128 is used in this document as a generic part number for the 25AA128, 25LC128 devices.  
© 2009 Microchip Technology Inc.  
DS21831D-page 1  

25AA128XT-I/ST 替代型号

型号 品牌 替代类型 描述 数据表
25AA128X-I/ST MICROCHIP

完全替代

128K SPI Bus Serial EEPROM
25AA128-I/SN MICROCHIP

完全替代

128K SPI Bus Serial EEPROM

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