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24LC174T/SN PDF预览

24LC174T/SN

更新时间: 2024-11-18 20:08:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 182K
描述
2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

24LC174T/SN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.92
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1DDDMMMR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWAREBase Number Matches:1

24LC174T/SN 数据手册

 浏览型号24LC174T/SN的Datasheet PDF文件第2页浏览型号24LC174T/SN的Datasheet PDF文件第3页浏览型号24LC174T/SN的Datasheet PDF文件第4页浏览型号24LC174T/SN的Datasheet PDF文件第5页浏览型号24LC174T/SN的Datasheet PDF文件第6页浏览型号24LC174T/SN的Datasheet PDF文件第7页 
Obsolete Device  
24LC174  
2 ™  
16K 2.5V Cascadable I C Serial EEPROM with OTP Security Page  
FEATURES  
PACKAGE TYPES  
• Single supply with operation down to 2.5V  
• 16 bytes OTP Secure Memory  
• Low power CMOS technology  
PDIP  
A0  
A1  
1
2
6
7
VCC  
WP  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
- 5 µA standby current typical at 3.0V  
• Organized as eight blocks of 256 bytes (8 x 256 x 8)  
• 2-wire serial interface bus, I2C compatible  
• Functional address inputs for cascading up to 8  
devices  
A2  
3
4
8
9
SCL  
SDA  
VSS  
• Schmitt trigger, filtered inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (2.5V) and 400 kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
8-lead  
SOIC  
1
6
A0  
A1  
VCC  
2
3
4
7
8
9
WP  
A2  
SCL  
SDA  
VSS  
• 1,000,000 Erase/Write cycles guaranteed  
• Data retention > 200 years  
• 8-pin DIP, 8-lead SOIC packages  
• Available temperature ranges:  
BLOCK DIAGRAM  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40° to +85°  
A0 A1  
A2  
WP  
HV GENERATOR  
DESCRIPTION  
I/O  
MEMORY  
CONTROL  
LOGIC  
EEPROM ARRAY  
(8 x 256 x 8)  
The Microchip Technology Inc. 24LC174 is a cascad-  
able 16K bit Electrically Erasable PROM. The device is  
organized as eight blocks of 256 x 8-bit memory with a  
2-wire serial interface and provides a specially  
addressed OTP (one-time programmable) 16 byte  
security block. Low voltage design permits operation  
down to 2.5 volts with standby and active currents of  
only 5 µA and 1 mA respectively. The 24LC174 also  
has a page-write capability for up to 16 bytes of data.  
The 24LC174 is available in the standard 8-pin DIP and  
8-lead surface mount SOIC packages.  
CONTROL  
LOGIC  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
V
CC  
SS  
SENSE AMP  
R/W CONTROL  
V
The three select pins, A0, A1, and A2, function as chip  
select inputs and allow up to eight devices to share a  
common bus, for up to 128K bits total system  
EEPROM.  
I2C is a trademark of Philips Corporation.  
2004 Microchip Technology Inc.  
DS21101H-page 1  

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