5秒后页面跳转
24LC04BH-I/MS PDF预览

24LC04BH-I/MS

更新时间: 2024-01-02 12:45:49
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
28页 469K
描述
4K I2C™ Serial EEPROM with Half-Array Write-Protect

24LC04BH-I/MS 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.53
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
I2C控制字节:1010DDMRJESD-30 代码:R-PDSO-G14
JESD-609代码:e0内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:8
端子数量:14字数:512 words
字数代码:512最高工作温度:85 °C
最低工作温度:-40 °C组织:512X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3/5 V认证状态:Not Qualified
串行总线类型:I2C最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.003 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL写保护:HARDWARE
Base Number Matches:1

24LC04BH-I/MS 数据手册

 浏览型号24LC04BH-I/MS的Datasheet PDF文件第1页浏览型号24LC04BH-I/MS的Datasheet PDF文件第3页浏览型号24LC04BH-I/MS的Datasheet PDF文件第4页浏览型号24LC04BH-I/MS的Datasheet PDF文件第5页浏览型号24LC04BH-I/MS的Datasheet PDF文件第6页浏览型号24LC04BH-I/MS的Datasheet PDF文件第7页 
24AA04H/24LC04BH  
1.0  
ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
VCC.............................................................................................................................................................................6.5V  
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +1.0V  
Storage temperature ...............................................................................................................................-65°C to +150°C  
Ambient temperature with power applied................................................................................................-40°C to +125°C  
ESD protection on all pins ......................................................................................................................................................≥ 4 kV  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at those or any other conditions  
above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating  
conditions for extended periods may affect device reliability.  
TABLE 1-1:  
DC CHARACTERISTICS  
VCC = +1.7V to +5.5V  
DC CHARACTERISTICS  
Industrial (I):  
TA = -40°C to +85°C  
Automotive (E): TA = -40°C to +125°C  
Param.  
Symbol  
No.  
Characteristic  
Min.  
Typ.  
Max.  
Units  
Conditions  
D1  
D2  
D3  
D4  
VIH  
WP, SCL and SDA pins  
High-level input voltage  
Low-level input voltage  
V
0.7 VCC  
VIL  
0.3 VCC  
V
VHYS  
Hysteresis of Schmitt  
Trigger inputs  
0.05 VCC  
V
(Note)  
D5  
D6  
D7  
D8  
VOL  
ILI  
Low-level output voltage  
Input leakage current  
Output leakage current  
0.40  
±1  
V
IOL = 3.0 mA, VCC = 2.5V  
VIN = VSS or VCC  
μA  
μA  
pF  
ILO  
±1  
VOUT = VSS or VCC  
CIN,  
Pin capacitance  
10  
VCC = 5.0V (Note)  
COUT  
(all inputs/outputs)  
TA = 25°C, FCLK = 1 MHz  
D9  
ICC write Operating current  
0.1  
3
1
mA  
mA  
VCC = 5.5V, SCL = 400 kHz  
D10  
D11  
ICC read  
0.05  
ICCS  
Standby current  
0.01  
1
5
μA  
μA  
Industrial  
Automotive  
SDA = SCL = VCC  
WP = VSS  
Note:  
This parameter is periodically sampled and not 100% tested.  
DS22119A-page 2  
© 2008 Microchip Technology Inc.  

与24LC04BH-I/MS相关器件

型号 品牌 描述 获取价格 数据表
24LC04BH-I/OT MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格

24LC04BH-I/P MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格

24LC04BH-I/SN MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格

24LC04BH-I/ST MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格

24LC04BHT MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格

24LC04BHT-E/MNY MICROCHIP 4K I2C™ Serial EEPROM with Half-Array Write-P

获取价格