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24C02CE/MC PDF预览

24C02CE/MC

更新时间: 2024-02-17 12:08:33
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 380K
描述
2K 5.0V I2C⑩ Serial EEPROM

24C02CE/MC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:WAFER
包装说明:DIE, WAFER针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.38
其他特性:2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XXXRJESD-30 代码:R-XUUC-N5
JESD-609代码:e3内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:5
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
输出特性:OPEN-DRAIN封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:WAFER
封装形状:RECTANGULAR封装形式:UNCASED CHIP
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
串行总线类型:I2C最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
最长写入周期时间 (tWC):10 msBase Number Matches:1

24C02CE/MC 数据手册

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24C02C  
2K 5.0V I2CSerial EEPROM  
Features:  
Package Types  
SOIC, TSSOP  
PDIP, MSOP  
• Single-supply with operation from 4.5 to 5.5V  
• Low-power CMOS technology:  
A0  
1
8
VCC  
1
2
8
7
A0  
A1  
A2  
VCC  
WP  
- Read current 1 mA, typical  
A1  
A2  
2
3
7
6
WP  
- Standby current 10 μA, typical  
SCL  
3
4
6
5
SCL  
SDA  
• 2-wire serial interface, I2C compatible  
• Cascadable up to eight devices  
VSS  
4
5
SDA VSS  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz and 400 kHz clock compatibility  
• Fast Page or Byte write time 1 ms, typical  
• Self-timed erase/write cycle  
DFN  
1
VCC  
WP  
A0  
A1  
8
7
6
5
2
3
4
SCL  
SDA  
A2  
VSS  
• 16-byte page write buffer  
• Hardware write-protect for upper half of the array  
(80h-FFh)  
Block Diagram  
• ESD protection >4,000V  
• More than 1 million erase/write cycles  
• Data retention >200 years  
WP  
A0 A1 A2  
HV Generator  
• Factory programming available  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN and MSOP  
EEPROM  
Array  
XDEC  
• Pb-free and RoHS compliant  
Temperature ranges:  
SDA  
SCL  
Vcc  
Vss  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
Write-Protect  
Circuitry  
YDEC  
Description:  
Sense Amp.  
R/W Control  
The Microchip Technology Inc. 24C02C is a 2K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 256 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
typical standby and active currents of only 10 μA and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes.  
Functional address lines allow the connection of up to  
eight 24C02C devices on the same bus for up to 16K  
bits of contiguous EEPROM memory. The device is  
available in the standard 8-pin PDIP, 8-pin SOIC (3.90  
mm), 8-pin 2x3 DFN, 8-pin MSOP and TSSOP  
packages.  
2
I C is a trademark of Philips Corporation.  
© 2007 Microchip Technology Inc.  
DS21202G-page 1  

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