5秒后页面跳转
24C02C-E/MC PDF预览

24C02C-E/MC

更新时间: 2024-01-09 15:29:56
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
30页 504K
描述
2K 5.0V I2C™ Serial EEPROM

24C02C-E/MC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:WAFER
包装说明:DIE, WAFER针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.38
其他特性:2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XXXRJESD-30 代码:R-XUUC-N5
JESD-609代码:e3内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:5
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
输出特性:OPEN-DRAIN封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:WAFER
封装形状:RECTANGULAR封装形式:UNCASED CHIP
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
串行总线类型:I2C最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
最长写入周期时间 (tWC):10 msBase Number Matches:1

24C02C-E/MC 数据手册

 浏览型号24C02C-E/MC的Datasheet PDF文件第2页浏览型号24C02C-E/MC的Datasheet PDF文件第3页浏览型号24C02C-E/MC的Datasheet PDF文件第4页浏览型号24C02C-E/MC的Datasheet PDF文件第5页浏览型号24C02C-E/MC的Datasheet PDF文件第6页浏览型号24C02C-E/MC的Datasheet PDF文件第7页 
24C02C  
2K 5.0V I2CSerial EEPROM  
Features:  
Description:  
• Single-Supply with Operation from 4.5V to 5.5V  
• Low-Power CMOS Technology:  
The Microchip Technology Inc. 24C02C is a 2K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 256 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
max. standby and active currents of only 5 μA and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes.  
Functional address lines allow the connection of up to  
eight 24C02C devices on the same bus for up to 16K  
bits of contiguous EEPROM memory. The device is  
available in the standard 8-pin PDIP, 8-pin SOIC (3.90  
mm), 8-pin 2x3 DFN and TDFN, 8-pin MSOP and  
TSSOP packages.  
- Read current 1 mA, max.  
- Standby current 5 μA, max.  
• 2-Wire Serial Interface, I2C™ Compatible  
• Cascadable up to Eight Devices  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Fast Page or Byte Write Time 1 ms, typical  
• Self-Timed Erase/Write Cycle  
• 16-Byte Page Write Buffer  
• Hardware Write-Protect for Upper Half of the  
Array (80h-FFh)  
Block Diagram  
• ESD Protection >4,000V  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
WP  
A0 A1 A2  
HV Generator  
• Factory Programming Available  
• Packages Include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN and MSOP  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
• Pb-Free and RoHS Compliant  
Temperature ranges:  
XDEC  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
SDA  
SCL  
Write-Protect  
Circuitry  
Vcc  
Vss  
YDEC  
Sense Amp.  
R/W Control  
Package Types  
SOIC, TSSOP  
PDIP, MSOP  
DFN/TDFN  
1
A0  
A1  
VCC  
WP  
8
A0  
1
8
VCC  
1
2
8
7
A0  
A1  
VCC  
7
6
5
2
3
4
A1  
A2  
2
3
7
6
WP  
WP  
SCL  
SDA  
A2  
SCL  
VSS  
3
4
6
5
A2  
SCL  
SDA  
VSS  
4
5
SDA  
VSS  
© 2008 Microchip Technology Inc.  
DS21202J-page 1  

与24C02C-E/MC相关器件

型号 品牌 描述 获取价格 数据表
24C02C-E/MCG MICROCHIP 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-

获取价格

24C02C-E/MNY MICROCHIP 2K 5.0V I2C™ Serial EEPROM

获取价格

24C02CE/MS MICROCHIP 2K 5.0V I2C⑩ Serial EEPROM

获取价格

24C02C-E/MS MICROCHIP 2K 5.0V I2C™ Serial EEPROM

获取价格

24C02CE/P MICROCHIP 2K 5.0V I2C⑩ Serial EEPROM

获取价格

24C02C-E/P MICROCHIP 2K 5.0V I2C™ Serial EEPROM

获取价格