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22SC5405 PDF预览

22SC5405

更新时间: 2024-10-29 22:10:59
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松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Silicon NPN triple diffusion planar type

22SC5405 数据手册

 浏览型号22SC5405的Datasheet PDF文件第2页 
Power Transistors  
2SC5405  
Silicon NPN triple diffusion planar type  
For high-speed switching and high current amplification ratio  
Unit: mm  
4.6±0.2  
Features  
High-speed switching  
9.9±0.3  
2.9±0.2  
High forward current transfer ratio hFE which has satisfactory  
φ3.2±0.1  
linearity  
Dielectric breakdown voltage of the package: > 5kV  
1.4±0.2  
2.6±0.1  
Absolute Maximum Ratings (T =25˚C)  
C
1.6±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.8±0.1  
0.55±0.15  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
2.54±0.3  
3
5.08±0.5  
50  
V
1
2
6
V
6
A
1:Base  
2:Collector  
3:Emitter  
IC  
3
A
Base current  
IB  
1
20  
A
TO–220D Full Pack Package  
Collector power TC=25°C  
PC  
W
dissipation  
Ta=25°C  
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
100  
100  
Unit  
µA  
µA  
µA  
V
VCB = 80V, IE = 0  
Collector cutoff current  
ICEO  
IEBO  
VCEO  
VCE = 40V, IB = 0  
VEB = 6V, IC = 0  
Emitter cutoff current  
Collector to emitter voltage  
Forward current transfer ratio  
IC = 25mA, IB = 0  
VCE = 4V, IC = 0.5A  
IC = 2A, IB = 0.05A  
50  
*
hFE  
500  
1500  
0.7  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
0.5  
V
V
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 12V, IC = 0.2A, f = 10MHz  
75  
0.3  
3.5  
0.9  
MHz  
µs  
IC = 1A, IB1 = 0.05A, IB2 = – 0.1A,  
VCC = 50V  
µs  
µs  
*hFE Rank classification  
Rank  
hFE  
P
Q
800 to 1500 500 to 1000  
1

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