Datasheet > 22SC5405

22SC5405

更新时间： 2024-10-31 22:10:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	39K
描述
Silicon NPN triple diffusion planar type

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中文翻译

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数据手册

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22SC5405 数据手册

Power Transistors

2SC5405

Silicon NPN triple diffusion planar type

For high-speed switching and high current amplification ratio

Unit: mm

4.6±0.2

Features

High-speed switching

■

9.9±0.3

2.9±0.2

●

High forward current transfer ratio h_FEwhich has satisfactory

φ3.2±0.1

linearity

●

Dielectric breakdown voltage of the package: > 5kV

1.4±0.2

2.6±0.1

Absolute Maximum Ratings (T =25˚C)

■

1.6±0.2

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.8±0.1

0.55±0.15

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.54±0.3

5.08±0.5

1:Base

2:Collector

3:Emitter

I_C

Base current

I_B

TO–220D Full Pack Package

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

2.0

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 80V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

V_CE= 40V, I_B= 0

V_EB= 6V, I_C= 0

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

I_C= 25mA, I_B= 0

V_CE= 4V, I_C= 0.5A

I_C= 2A, I_B= 0.05A

h_FE

500

1500

0.7

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 12V, I_C= 0.2A, f = 10MHz

0.3

3.5

0.9

MHz

µs

I_C= 1A, I_B1= 0.05A, I_B2= – 0.1A,

V_CC= 50V

µs

^*h_FERank classification

Rank

h_FE

800 to 1500 500 to 1000

中文翻译

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