Datasheet > 2223-1.7

2223-1.7

更新时间： 2024-11-11 03:55:15

品牌	Logo	应用领域
GHZTECH		晶体晶体管微波放大器局域网
页数	文件大小	规格书
3页	249K
描述
1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz

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2223-1.7 数据手册

2223-1.7

1.7 Watts - 24 Volts, Class C

Microwave 2200 - 2300

MHz

CASE OUTLINE

55LV, STYLE 1

GENERAL DESCRIPTION

The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts

of Class C, RF output power over the band 2200 - 2300 MHz. This transistor

is designed for Microwave Broadband Class C amplifier applications. It

includes input prematching and utilizes Gold metalization and diffused

ballasting to provide high reliability and supreme ruggedness. The transistor

uses a fully hermetic High Temperature Solder sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

7 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage

BVebo Emitter to Base Voltage

45 Volts

3.5 Volts

.25 Amps

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST

MIN

TYP

MAX UNITS

CONDITIONS

Power Output

Power Input

Power Gain

F =2.2 - 2.3 GHz

Vcc = 24 Volts

1.7

8.3

Watts

Pout

.25

Efficiency

Load Mismatch Tolerance

10:1

VSWR

Collector to Base Breakdown

Emitter to Base Breakdown

Current Gain

Output Capacitance

Thermal Resistance

Ic = 10 mA

Ie = 2 mA

Vce = 5 V, Ic = 160mA

Vcb = 28V, 1MHz

Tc = 25 ^oC

3.5

Volts

BVces

BVebo

Hfe

100

Cob

^oC/W

Issue A June 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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