VS-21DQ04, VS-21DQ04-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
DO-204AL
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-204AL (DO-41)
2 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
40 V
VF at IF
0.5 V
DESCRIPTION
I
RM max.
10 mA at 125 °C
150 °C
The VS-21DQ04... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
TJ max.
Diode variation
EAS
Single die
5.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
VF
CHARACTERISTICS
VALUES
UNITS
Rectangular waveform
2
40
A
V
2 Apk, TJ = 125 °C
0.5
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-21DQ04
VS-21DQ04-M3
40
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
40
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 112 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
2
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 µs sine or 3 µs rect. pulse
420
Followinganyratedload
condition and with rated
VRRM applied
IFSM
10 ms sine or 6 ms rect. pulse
70
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1.0 A, L = 10 mH
5.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
Revision: 21-Sep-11
Document Number: 93279
1
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