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20P60

更新时间： 2024-11-01 00:04:27

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摩托罗拉 - MOTOROLA		栅
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P-Channel Enhancement-Mode Silicon Gate

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by MTD20P06HDL/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

TMOS POWER FET

LOGIC LEVEL

15 AMPERES

60 VOLTS

P–Channel Enhancement–Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to

withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain–to–source

diode with a fast recovery time. Designed for low–voltage,

high–speed switching applications in power supplies, converters

and PWM motor controls, and other inductive loads. The avalanche

energy capability is specified to eliminate the guesswork in designs

where inductive loads are switched, and to offer additional safety

margin against unexpected voltage transients.

= 175 MΩ

DS(on)

•

Ultra Low R , High–Cell Density, HDTMOS

DS(on)

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

Avalanche Energy Specified

CASE 369A–13, Style 2

DPAK

Surface Mount Package Available in 16 mm, 13–inch/2500

Unit, Tape & Reel, Add T4 Suffix to Part Number

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–Source Voltage

DSS

Vdc

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

± 15

± 20

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

9.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T = 25°C (1)

0.58

1.75

Watts

W/°C

Watts

Operating and Storage Temperature Range

T , T

stg

–55 to 150

300

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V = 5.0 Vdc, I = 15 Apk, L = 2.7 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Thermal Resistance — Junction to Ambient (1)

1.73

100

71.4

°C/W

°C

θJC

θJA

Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc.

TMOS is a registered trademark of Motorola Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7...12

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与20P60相关器件

型号	品牌	获取价格	描述	数据表
20P-6033-0122-0	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder T
20P-6033-0122-4	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder T
20P-6033-0122-6	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Wire Wra
20P-6033-0122-7	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Wire Wra
20P-6033-0122-9	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Press Fi
20P-6033-0131-0	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder T
20P-6033-0131-3	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder T
20P-6033-0131-4	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder T
20P-6043-0431-3	WINCHESTER	获取价格	Board Euro Connector, 20 Contact(s), 2 Row(s), Male, Straight, 0.1 inch Pitch, Solder Term
20P-6043-1422-5	WINCHESTER	获取价格	Board Euro Connector, 10 Contact(s), 2 Row(s), Male, Straight, 0.1 inch Pitch, Wire Wrap T

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