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20NAB06 PDF预览

20NAB06

更新时间: 2024-10-29 21:55:23
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描述
3-phase bridge rectifier +braking chopper +3-phase bridge inverter

20NAB06 数据手册

 浏览型号20NAB06的Datasheet PDF文件第2页浏览型号20NAB06的Datasheet PDF文件第3页浏览型号20NAB06的Datasheet PDF文件第4页 
SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I  
Absolute Maximum Ratings  
MiniSKiiP 2  
SEMIKRON integrated  
intelligent Power  
Symbol  
Conditions 1)  
Values  
Units  
SKiiP 22 NAB 12  
SKiiP 22 NAB 12 I 3)  
Inverter & Chopper  
VCES  
VGES  
1200  
± 20  
23 / 15  
46 / 30  
24 / 17  
48 / 34  
V
V
A
A
A
A
3-phase bridge rectifier +  
braking chopper +  
3-phase bridge inverter  
IC  
ICM  
IF = –IC  
Theatsink = 25 / 80 °C  
tp < 1 ms; Theatsink = 25 / 80 °C  
heatsink = 25 / 80 °C  
T
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C  
Case M2  
Bridge Rectifier  
VRRM  
1500  
25  
V
A
ID  
Theatsink = 80 °C  
IFSM  
tp = 10 ms; sin. 180 °, Tj = 25 °C  
tp = 10 ms; sin. 180 °, Tj = 25 °C  
700  
2400  
A
I2t  
A2s  
Tj  
Tstg  
Visol  
– 40 . . . + 150  
– 40 . . . + 125  
2500  
°C  
°C  
V
AC, 1 min.  
Characteristics  
Symbol  
Conditions 1)  
min.  
typ.  
max. Units  
IGBT - Inverter & Chopper  
VCEsat  
td(on)  
tr  
td(off)  
tf  
Eon + Eoff  
Cies  
Rthjh  
IC = 15 A Tj = 25 (125) °C  
CC = 600 V; VGE = ± 15 V  
2,5(3,1) 3,0(3,7)  
V
ns  
ns  
ns  
ns  
mJ  
nF  
K/W  
V
55  
45  
110  
90  
IC = 15 A; Tj = 125 °C  
Rgon = Rgoff = 82 Ω  
inductive load  
400  
70  
4,0  
1,0  
600  
100  
1,4  
VCE = 25 V; VGE = 0 V, 1 MHz  
per IGBT  
UL recognized file no. E63532  
Diode 2) - Inverter & Chopper  
VF = VEC IF = 15 A Tj = 25 (125) °C  
specification of shunts and  
temperature sensor see part A  
common characteristics see  
page B 16 – 4  
2,0(1,8) 2,5(2,3)  
V
V
mΩ  
A
µC  
mJ  
K/W  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
1,0  
53  
16  
2,7  
0,6  
1,2  
73  
IRRM  
Qrr  
IF = 15 A, VR = – 600 V  
diF/dt = – 400 A/µs  
1)  
Theatsink = 25 °C, unless  
Eoff  
Rthjh  
VGE = 0 V, Tj = 125 °C  
per diode  
otherwise specified  
CAL = Controlled Axial Lifetime  
1,7  
2)  
Diode - Rectifier  
Technology (soft and fast  
recovery)  
With integrated DC and/or AC  
VF  
Rthjh  
IF = 35 A, Tj = 25 °C  
per diode  
1,2  
1,6  
V
K/W  
3)  
shunts  
Temperature Sensor  
4)  
accuracy of pure shunt, please  
RTS  
T = 25 / 100 °C  
1000 / 1670  
note that for DC shunt no  
separate sensing contact is  
used.  
Shunts (SKiiP 22 NAB 12 I)  
Rcs(dc)  
Rcs(ac)  
5 % 4)  
1 %  
16,5  
10  
mΩ  
mΩ  
Mechanical Data  
case to heatsink, SI Units  
2
2,5  
Nm  
M1  
Case  
mechanical outline see page  
B 16 – 8  
M2  
© by SEMIKRON  
000131  
B 16 – 53  

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