VS-20MQ040-M3
Vishay Semiconductors
www.vishay.com
100
10
T = 25° C
J
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
10
0
5
10 15 20 25 30 35 40
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
160
150
140
130
120
110
100
90
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
80
70
60
Square wave (D=0.50)
rated Vr applied
50
40
see note (1)
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage Drop -VFM (V)
Averageforwardcurrent-I
(A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
1.4
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.2
1
10
T = 150°C
J
125°C
1
100°C
RMS Lim it
0.8
0.6
0.4
0.2
0
DC
0.1
0.01
75°C
50°C
25°C
0.001
0.0001
0
5
10 15 20 25 30 35 40
0
0.4
0.8
1.2
1.6
2
2.4
(A)
Reverse Voltage - V (V)
R
Average Forward Current - I
F( AV)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 22-Aug-11
Document Number: 93370
3
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