VS-20MQ060NPbF
Vishay Semiconductors
Schottky Rectifier, 2.1 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
Cathode
Anode
• Small foot print, surface mountable
• High frequency operation
SMA
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRODUCT SUMMARY
Package
SMA
2.1 A
60 V
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
IF(AV)
VR
DESCRIPTION
VF at IF
IRM
See Electrical table
7.5 mA at 125 °C
150 °C
The VS-20MQ060NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
TJ max.
Diode variation
EAS
Single die
2.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
2.1
UNITS
Rectangular waveform
A
V
60
tp = 5 μs sine
2 Apk, TJ = 125 °C
Range
40
A
VF
0.68
V
TJ
- 55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-20MQ060NPbF
UNITS
Maximum DC reverse voltage
VR
60
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
50 % duty cycle at TC = 107 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
IF(AV)
2.1
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
40
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1 A, L = 4 mH
10
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
2.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
Document Number: 94592
Revision: 26-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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