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20MQ100-M3 PDF预览

20MQ100-M3

更新时间: 2022-09-15 00:20:04
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 115K
描述
Schottky Rectifier, 2 A

20MQ100-M3 数据手册

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VS-20MQ100-M3  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 2 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Halogen-free according to IEC 61249-2-21  
definition  
SMA  
• Small foot print, surface mountable  
• High frequency operation  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
SMA  
2 A  
IF(AV)  
• Compliant to RoHS Directive 2002/95/EC  
VR  
100 V  
0.72 V  
DESCRIPTION  
VF at IF  
IRM  
The VS-20MQ100-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. Typical  
applications are in disk drives, switching power supplies,  
converters, freewheeling diodes, battery charging, and  
reverse battery protection.  
1 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
2
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
2 Apk, TJ = 125 °C  
Range  
120  
A
VF  
0.72  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-20MQ100-M3  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 113 °C, rectangular waveform  
On PC board 9 mm2 island (0.013 mm thick copper pad area)  
2.1  
Maximum average forward current  
See fig. 4  
IF(AV)  
A
50 % duty cycle at TL = 116 °C, rectangular waveform  
On PC board 9 mm2 island (0.013 mm thick copper pad area)  
2
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
120  
30  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
0.5  
mJ  
A
Revision: 22-Aug-11  
Document Number: 93361  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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