Datasheet > 20MQ100-M3

20MQ100-M3

更新时间： 2022-09-15 00:20:04

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	115K
描述
Schottky Rectifier, 2 A

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20MQ100-M3 数据手册

VS-20MQ100-M3

Vishay Semiconductors

www.vishay.com

100

T = 25° C

T = 150°C

100

Re v e rse Vo lt a g e - V ( V )

T = 125°C

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

T = 25° C

160

150

140

130

120

110

100

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

Square wave (D=0.50)

rated Vr applied

see note (1)

0.1

0.4

0.6

0.8

1.2

1.4

1.6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Averageforwardcurrent-I_F(AV)(A)

Forward Voltage Drop - V (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 4 - Maximum Average Forward Current vs.

Allowable Lead Temperature

T = 150°C

D = 0.20

D = 0.25

125°C

100°C

75°C

2.5

0.1

0.01

D = 0.33

D = 0.50

D = 0.75

1.5

2.5

RMS Limit

0.001

0.0001

50°C

25°C

0.5

100

0.5

1.5

Reverse Voltage - V (V)

Averageforwardcurrent-I_F(AV)(A)

Fig. 2 - Typical Peak Reverse Current vs.

Reverse Voltage

Fig. 5 - Maximum Average Forward Dissipation vs.

Average Forward Current

Note

(1)

Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

;

Pd = Forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6); Pd_REV= Inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= 80 % rated V_R

Revision: 22-Aug-11

Document Number: 93361

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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