VS-20MQ040-M3
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.69
0.62
0.54
0.63
0.56
0.49
0.5
UNITS
2 A
1.5 A
1 A
TJ = 25 °C
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
2 A
1.5 A
1 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
IRM
VR = Rated VR
mA
26
Threshold voltage
VF(TO)
rt
0.36
104
V
TJ = TJ maximum
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
m
pF
CT
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
38
LS
2.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ (1), TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
80
°C/W
0.07
g
Approximate weight
0.002
oz.
Marking device
Case style SMA (similar D-64)
2F
Note
dPtot
1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
Revision: 22-Aug-11
Document Number: 93370
2
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