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20CTQ150STRRPBF PDF预览

20CTQ150STRRPBF

更新时间: 2024-11-20 06:17:35
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 129K
描述
Schottky Rectifier, 2 x 10 A

20CTQ150STRRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.24Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.66 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1030 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:150 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

20CTQ150STRRPBF 数据手册

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20CTQ150SPbF, 20CTQ150-1PbF  
Vishay High Power Products  
Schottky Rectifier, 2 x 10 A  
FEATURES  
20CTQ150-1PbF  
20CTQ150SPbF  
• 175 °C TJ operation  
Available  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
RoHS*  
COMPLIANT  
Base  
Base  
common  
cathode  
common  
cathode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Lead (Pb)-free (“PbF” suffix)  
• Designed for industrial level  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
DESCRIPTION  
D2PAK  
TO-262  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 175 °C junction  
temperature. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
150 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 µs sine  
1030  
A
VF  
10 Apk, TJ = 125 °C (per leg)  
Range  
0.66  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
20CTQ150SPbF  
20CTQ150-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
150  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 154 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
10  
20  
IF(AV)  
per device  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 µs sine or 3 µs rect. pulse  
1030  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 2 mH  
180  
1.0  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94490  
Revision: 11-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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