Datasheet > 20CUT10FN

20CUT10FN

更新时间： 2024-11-24 07:31:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	154K
描述
High Performance Schottky Generation 5.0, 2 x 10 A

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中文翻译

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数据手册

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20CUT10FN 数据手册

VS-20CUT10, VS-20CWT10FN

Vishay Semiconductors

High Performance Schottky Generation 5.0, 2 x 10 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

I-PAK(TO-251AA)

D-PAK(TO-252AA)

• Optimized V_Fvs. I_Rtrade off for high efficiency

• Increased ruggedness for reverse avalanche capability

• RBSOA available

Base

common

cathode

Base

common

cathode

• Negligible switching losses

• Submicron trench technology

Anode

Common

cathode

Anode

• Compliant to RoHS Directive 2002/95/EC

Anode

Common

cathode

APPLICATIONS

VS-20CUT10

VS-20CWT10FN

• High efficiency SMPS

• High frequency switching

• Output rectification

PRODUCT SUMMARY

D-PAK (TO-252AA),

I-PAK (TO-251AA)

Package

• Reverse battery protection

• Freewheeling

I_F(AV)

V_R

2 x 10 A

100 V

• DC/DC systems

V_Fat I_F

0.66 V

• Increased power density systems

_RMmax.

4 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Common cathode

54 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

V_RRM

V_F

CHARACTERISTICS

VALUES

100

UNITS

10 Apk, T_J= 125 °C (typical, per leg)

Range

0.615

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

VS-20CUT10

VS-20CWT10FN

SYMBOL

TEST CONDITIONS

T_J= 25 °C

UNITS

Maximum DC reverse voltage

V_R

100

Document Number: 94651

Revision: 04-Jan-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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