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1ZC36 PDF预览

1ZC36

更新时间: 2024-09-18 22:07:43
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管齐纳二极管
页数 文件大小 规格书
4页 115K
描述
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE

1ZC36 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.92外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:30 Ω
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
标称参考电压:36 V最大反向电流:10 µA
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
电压温度Coeff-Max:45 mV/ °C最大电压容差:10%
工作测试电流:9 mA

1ZC36 数据手册

 浏览型号1ZC36的Datasheet PDF文件第2页浏览型号1ZC36的Datasheet PDF文件第3页浏览型号1ZC36的Datasheet PDF文件第4页 
1ZC12~1ZC120  
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE  
TENTATIVE  
1ZC12~1ZC120  
CONSTANT VOLTAGE REGULATION  
TELEPHONE, PRINTER USES  
Unit: mm  
lAverage Power Dissipation  
lZener Voltage  
: P = 1.0W  
: V = 12~120 V  
Z
lTolerance of Zener Voltage (V ) : ±10%  
Z
l Plastic Mold Package  
MAXIMUM RATINGS (Ta=25°C)  
CHARACTERISTIC  
Power Dissipation  
SYMBOL  
RATING  
UNIT  
P
1.0  
W
°C  
°C  
Junction Temperature  
T
j
40~150  
40~150  
Storage Temperature Range  
T
stg  
JEDEC  
EIAJ  
TOSHIBA  
33F2A  
Weight: 0.18g (Typ.)  
MARKING  
1
2001-06-13  

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