Datasheet > 1ZC18(TPA3,Q)

1ZC18(TPA3,Q)

更新时间： 2024-09-19 20:02:15

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
5页	193K
描述
Zener Diode

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中文翻译

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技术参数
数据手册

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1ZC18(TPA3,Q) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.75	二极管类型：	ZENER DIODE
Base Number Matches：	1

1ZC18(TPA3,Q) 数据手册

1ZC12~1ZC120

TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE

1ZC12~1ZC120

Unit: mm

CONSTANT VOLTAGE REGULATION

TELEPHONE, PRINTER USES

z Average Power Dissipation

z Zener Voltage

: P = 1.0W

: V = 12 V to 120 V

z Tolerance of Zener Voltage (V ) : ±10%

z Plastic Mold Package

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

CHARACTERISTIC

Power Dissipation

SYMBOL

RATING

UNIT

1.0

°C

Junction Temperature

−40 to 150

Storage Temperature Range

stg

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

3−3F2A

Weight: 0.18g (Typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

MARKING

Abbreviation Code

ZC120

Part No.

1ZC120

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

120

2011-01-05

12 3 4 5

中文翻译

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