1SS301
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS301
Ultra High Speed Switching Applications
Unit: mm
AEC-Q101 Qualified (Note1)
Small package
: SC-70
: V
Low forward voltage
= 0.9 V (typ.)
F (3)
Fast reverse recovery time: t = 1.6 ns (typ.)
rr
Small total capacitance
: C = 0.9 pF (typ.)
T
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
85
80
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
I
300 (*)
100 (*)
2 (*)
mA
mA
A
FM
I
O
I
FSM
P
JEDEC
JEITA
―
100
mW
°C
°C
SC-70
Junction temperature
125
Tj
Storage temperature
T
−55 to 125
stg
TOSHIBA
1-2P1B
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 1 mA
Min
Typ.
Max
Unit
V
V
V
V
―
―
―
―
―
―
―
I
I
I
―
―
―
―
―
―
―
0.60
0.72
0.90
―
―
―
F (1)
F (2)
F (3)
R (1)
R (2)
F
F
F
= 10 mA
Forward voltage
= 100 mA
1.20
0.1
0.5
3.0
4.0
I
I
V
V
V
= 30 V
R
R
R
Reverse current
μA
= 80 V
―
Total capacitance
C
T
= 0, f = 1 MHz
0.9
1.6
pF
ns
Reverse recovery time
t
I = 10 mA, Fig.1
F
rr
Start of commercial production
1986-11
1
2015-01-09