是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | R-PDSO-C2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.17 |
Is Samacsys: | N | 最大击穿电压: | 76.7 V |
最小击穿电压: | 66.7 V | 击穿电压标称值: | 71.7 V |
最大钳位电压: | 96.8 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 60 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn80Pb20) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SMBJ60A | HY |
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