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1SMB5930BV-T PDF预览

1SMB5930BV-T

更新时间: 2024-01-17 21:32:29
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
8页 145K
描述
Zener Diode,

1SMB5930BV-T 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.68二极管类型:ZENER DIODE
Base Number Matches:1

1SMB5930BV-T 数据手册

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1SMB5913B  
THRU  
1SMB5956B  
Surface Mount SILICON ZENER DIODES  
Zener Voltage 3.3 to 200 Volts 3 Watt Power Dissipation  
FEATURES  
* Glass passivated chip  
* Built-in strain relief  
* Low inductance  
* High peak reverse power dissipation  
* Low reverse leakage  
* For use in stabilizing and clipping with high power rating  
* ESD Rating of Class 3 (> 20 kV) per Human Body Model  
* P/N suffix V means AEC-Q101 qualified, e.g:1SMB5913BV  
* P/N suffix V means Halogen-free  
SMB  
0.086 (2.20)  
0.071(1.80)  
0.155 (3.94)  
0.130 (3.30)  
0.183 (4.65)  
0.160 (4.06)  
MECHANICAL DATA  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: Solderable per MIL-STD-750, method 2026  
0.012 (0.305)  
0.006 (0.152)  
0.096 (2.44)  
0.081 (2.05)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0.004 (0.102)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Resistive or inductive load.  
0.220 (5.59)  
0.205 (5.21)  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratings (Ta = 25  
)
Parameter  
Symbol  
P
Rating  
3000  
25  
Unit  
mW  
/W  
Power dissipation  
@ TL = 75  
Thermal Resistance, Junction to Lead  
R JL  
1.2  
Maximum forward voltage at if=200mA  
VF  
V
Peak Forward Surge Current 8.3 ms single half  
sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
I2T  
A
50  
2
Typical Current Square Time  
A S  
10.37  
j
Storage temperature and Jumction temperature  
Tstg  
-55 to +150  
,T  
2019-01/08  
REV:D  

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