1SMB5913B
THRU
1SMB5956B
Surface Mount SILICON ZENER DIODES
Zener Voltage 3.3 to 200 Volts 3 Watt Power Dissipation
FEATURES
* Glass passivated chip
* Built-in strain relief
* Low inductance
* High peak reverse power dissipation
* Low reverse leakage
* For use in stabilizing and clipping with high power rating
* ESD Rating of Class 3 (> 20 kV) per Human Body Model
* P/N suffix V means AEC-Q101 qualified, e.g:1SMB5913BV
* P/N suffix V means Halogen-free
SMB
0.086 (2.20)
0.071(1.80)
0.155 (3.94)
0.130 (3.30)
0.183 (4.65)
0.160 (4.06)
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
* Lead: Solderable per MIL-STD-750, method 2026
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.081 (2.05)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0.004 (0.102)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Resistive or inductive load.
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Ta = 25
)
Parameter
Symbol
P
Rating
3000
25
Unit
mW
/W
Power dissipation
@ TL = 75
Thermal Resistance, Junction to Lead
R JL
1.2
Maximum forward voltage at if=200mA
VF
V
Peak Forward Surge Current 8.3 ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
I2T
A
50
2
Typical Current Square Time
A S
10.37
j
Storage temperature and Jumction temperature
Tstg
-55 to +150
,T
2019-01/08
REV:D