Datasheet > 1SMB5931BV-T

1SMB5931BV-T

更新时间： 2024-01-18 18:19:27

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
8页	145K
描述
Zener Diode,

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中文翻译

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技术参数
数据手册

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1SMB5931BV-T 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.67	二极管类型：	ZENER DIODE
Base Number Matches：	1

1SMB5931BV-T 数据手册

1SMB5913B

THRU

1SMB5956B

Surface Mount SILICON ZENER DIODES

Zener Voltage 3.3 to 200 Volts 3 Watt Power Dissipation

FEATURES

* Glass passivated chip

* Built-in strain relief

* Low inductance

* High peak reverse power dissipation

* Low reverse leakage

* For use in stabilizing and clipping with high power rating

* ESD Rating of Class 3 (> 20 kV) per Human Body Model

* P/N suffix V means AEC-Q101 qualified, e.g:1SMB5913BV

* P/N suffix V means Halogen-free

SMB

0.086 (2.20)

0.071(1.80)

0.155 (3.94)

0.130 (3.30)

0.183 (4.65)

0.160 (4.06)

MECHANICAL DATA

* Epoxy: Device has UL flammability classification 94V-O

* Lead: Solderable per MIL-STD-750, method 2026

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.081 (2.05)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

0.004 (0.102)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Resistive or inductive load.

0.220 (5.59)

0.205 (5.21)

Dimensions in inches and (millimeters)

Absolute Maximum Ratings (Ta = 25

)

Parameter

Symbol

Rating

3000

Unit

Power dissipation

@ TL = 75

Thermal Resistance, Junction to Lead

R JL

1.2

Maximum forward voltage at if=200mA

V^F

Peak Forward Surge Current 8.3 ms single half

sine-wave superimposed on rated load

(JEDEC method)

I^FSM

I²T

Typical Current Square Time

A S

10.37

Storage temperature and Jumction temperature

T^stg

-55 to +150

2019-01/08

REV:D

12 3 4 5 6 7 8

中文翻译

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