Datasheet > 1SMB3EZ200

1SMB3EZ200

更新时间： 2024-02-12 18:43:56

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管
页数	文件大小	规格书
5页	131K
描述
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts)

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中文翻译

获取价格

数据手册

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1SMB3EZ200 数据手册

1SMB3EZ11 THRU 1SMB3EZ200

SURFACE MOUNT SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts

Power - 3.0 Watts

FEATURES

For surface mounted applications in order to

DO-214AA

optimize board space

Low profile package

Built-in strain relief

MODIFIED J-BEND

Glass passivated junction

Low inductance

Excellent clamping capability

£g

Typical I_Dless than 1 A above 11V

High temperature soldering :

¢J

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-214AA, Molded plastic over

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026

Polarity: Color band denotes positive end (cathode)

except Bidirectional

Standard Packaging: 12mm tape(EIA-481)

Weight: 0.003 ounce, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

¢J

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

UNITS

Watts

Peak Pulse Power Dissipation (Note A)

¢J

Derate above 75

mW/

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note B)

I_FSM

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

¢J

NOTES:

A. Mounted on 5.0mm²(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses

per minute maximum.

12 3 4 5

中文翻译

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