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1SMB3EZ22 PDF预览

1SMB3EZ22

更新时间: 2024-01-13 04:09:21
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管测试光电二极管
页数 文件大小 规格书
5页 131K
描述
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts)

1SMB3EZ22 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.26
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:12 ΩJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:3 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:34 mABase Number Matches:1

1SMB3EZ22 数据手册

 浏览型号1SMB3EZ22的Datasheet PDF文件第2页浏览型号1SMB3EZ22的Datasheet PDF文件第3页浏览型号1SMB3EZ22的Datasheet PDF文件第4页浏览型号1SMB3EZ22的Datasheet PDF文件第5页 
1SMB3EZ11 THRU 1SMB3EZ200  
SURFACE MOUNT SILICON ZENER DIODE  
VOLTAGE - 11 TO 200 Volts  
Power - 3.0 Watts  
FEATURES  
l
For surface mounted applications in order to  
DO-214AA  
optimize board space  
Low profile package  
Built-in strain relief  
MODIFIED J-BEND  
l
l
l
l
Glass passivated junction  
Low inductance  
l
l
Excellent clamping capability  
£g  
Typical ID less than 1 A above 11V  
l
High temperature soldering :  
¢J  
260 /10 seconds at terminals  
l
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
MECHANICAL DATA  
Case: JEDEC DO-214AA, Molded plastic over  
passivated junction  
Terminals: Solder plated, solderable per  
MIL-STD-750, method 2026  
Polarity: Color band denotes positive end (cathode)  
except Bidirectional  
Standard Packaging: 12mm tape(EIA-481)  
Weight: 0.003 ounce, 0.093 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
¢J  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PD  
VALUE  
UNITS  
Watts  
Peak Pulse Power Dissipation (Note A)  
3
¢J  
24  
¢J  
Derate above 75  
mW/  
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated  
load(JEDEC Method) (Note B)  
IFSM  
15  
Amps  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
¢J  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses  
per minute maximum.  

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