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1SMA26CAT3G PDF预览

1SMA26CAT3G

更新时间: 2024-02-15 15:42:50
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
5页 352K
描述
Trans Voltage Suppressor Diode, 400W, 26V V(RWM), Bidirectional, 1 Element, Silicon, SMA, 2 PIN

1SMA26CAT3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:LEAD FREE, PLASTIC, CASE 403D-02, SMA, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.32其他特性:LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
最大击穿电压:31.94 V最小击穿电压:28.9 V
击穿电压标称值:30.4 V最大钳位电压:42.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:26 V子类别:Transient Suppressors
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

1SMA26CAT3G 数据手册

 浏览型号1SMA26CAT3G的Datasheet PDF文件第2页浏览型号1SMA26CAT3G的Datasheet PDF文件第3页浏览型号1SMA26CAT3G的Datasheet PDF文件第4页浏览型号1SMA26CAT3G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 400W > 1SMA10CAT3G Series  
Pb  
1SMA10CAT3G Series  
Description  
The 1SMA10CAT3G series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The 1SMA10CAT3G series is supplied in the  
Littelfuse exclusive, cost-effective, highly reliable package  
and is ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many  
other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 10 V to 78 V  
Maximum Ratings andThermal Characteristics  
• Standard Zener Breakdown Voltage Range −  
11.7 V to 91.3 V  
Parameter  
Symbol  
PPK  
Value  
400  
Unit  
W
• Peak Power − 400 W @ 1 ms  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• ResponseTime isTypically < 1 ns  
• Flat Handling Surface for Accurate Placement  
• Package Design forTop Slide or Bottom Circuit  
Board Mounting  
Peak Power Dissipation (Note 1) @ TL =  
25°C, Pulse Width = 1 ms  
DC Power Dissipation @ TL = 75°C  
Measured Zero Lead Length (Note 2)  
PD  
W
1.5  
20  
50  
Derate Above 75°C  
Thermal Resistance from Junction−  
to−Lead  
mW/°C  
°C/W  
RJL  
• Low Profile Package  
0.5  
4.0  
250  
W
• These are Pb−Free Device  
DC Power Dissipation (Note 3) @ TA =  
25°C Derate Above 25°C  
P
D
mW/°C  
°C/W  
Thermal Resistance from Junction–to–  
Ambient  
R
Functional Diagram  
0JA  
Forward Surge Current (Note 4) @ TA  
= 25°C  
IFSM  
40  
A
Additional Information  
Operating and Storage Temperature  
Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If  
any of these limits are exceeded, device functionality should not be assumed, damage may  
occur and reliability may be affected.  
Samples  
Datasheet  
Resources  
1. 10 X 1000 µs, non−repetitive.  
2. 1” square copper pad, FR−4 board.  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02  
case outline dimensions spec.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/14/17  

1SMA26CAT3G 替代型号

型号 品牌 替代类型 描述 数据表
SZ1SMA26CAT3G LITTELFUSE

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Trans Voltage Suppressor Diode, 400W, 26V V(RWM), Bidirectional, 1 Element, Silicon, SMA,
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