Datasheet > 1S1886

1S1886

更新时间： 2024-11-15 02:55:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
2页	56K
描述
PLASTIC SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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1S1886 数据手册

1S1885(Z) - - -1S1888(Z)

GALAXY ELECTRICAL

VOLTAGE RANGE: 100 --- 600 V

CURRENT: 1.0 A

PLASTIC SILICON RECTIFIER

FEATURES

Low cost

DO - 15

Diffused juncton

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

Case:JEDEC DO--15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.014 ounces,0.39 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

1885

1886

1887

1888

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forw ard rectified current

1.0

I_F(AV)

I_FSM

V_F

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

60.0

1.2

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 1.5 A

Maximum reverse current

@T_A=25

5.0

50.0

I_R

at rated DC blocking voltage @T_A=100

p F

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

R_θ

Operating junction temperature range

Storage temperature range

- 55---- + 150

- 55 ---- + 150

T_J

T_STG

www.galaxycn.com

NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

2. Thermal resistance f rom junction to ambient.

Document Number 0260016

BLGALAXY ELECTRICAL

中文翻译

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1S1887ATPA1	TOSHIBA	获取价格	DIODE 1.2 A, 400 V, SILICON, RECTIFIER DIODE, Rectifier Diode
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