Datasheet > 1PTxxES

1PTxxES

更新时间： 2022-02-26 11:05:30

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
4页	383K
描述
Sensitive gate SCRs, 1A

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1PTxxES 数据手册

RoHS

1PT Series

SEMICONDUCTOR

ORDERING INFORMATION SCHEME

1 PT 06

Current

1 = 1A, I_T(RMS)

SCR series

Voltage Code

06 = 600V

08 = 800V

Package type

E = TO-92

IGT Sensitivity

03 = 10~30 µA

05 = 20~50 µA

06 = 30~60 µA

08 = 50~80 µA

S = 70~200 µA

Fig.1 Maximum power dissipation versus RMS

on-state current (full cycle)

P(W)

Fig.2 RMS on-state current versus case

temperature (full cycle)

I_T(RMS)(A)

1.0

0.8

0.6

0.4

0.2

I_T(RMS)(A)

T_C(°C)

0.2

0.4

0.6

0.8

1.0

100

125

Fig.4 Surge peak on-state current versus number

Fig.3 On-state characteristics (maximum values)

of cycles

I_TM(A), I²t(A²s)

I_TSM(A)

t=10ms

Half cycle

Tjmax

Vto=0.85V

Rd=60mΩ

Non repetltlve

1.0

Tj lntla=25°C

Tj=Tjmax

Tj=25°C

(V)

Number of cycles

0.1

1000

0.5

1.0

1.5

2.0

2.5

100

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