Datasheet > 1PS79SB10115

1PS79SB10115

更新时间： 2022-05-21 04:16:33

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
8页	132K
描述
Schottky barrier single diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1PS79SB10115 数据手册

NXP Semiconductors

1PS79SB10

Schottky barrier single diode

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

1PS79SB10

SOD523

plastic surface-mounted package; 2 leads

SOD523

4. Marking

Table 4.

Marking codes

Type number

Marking code

1PS79SB10

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_R

Parameter

Conditions

Min

Max

Unit

reverse voltage

forward current

I_F

200

300

600

I_FRM

I_FSM

repetitive peak forward current t_p≤ 1 s; δ ≤ 0.5

non-repetitive peak forward

current

t_p< 10 ms; T_j(init)= 25 °C

T_j

junction temperature

ambient temperature

storage temperature

125

150

°C

T_amb

T_stg

-65

6. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

450

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

1PS79SB10

All information provided in this document is subject to legal disclaimers.

Product data sheet

14 August 2012

2 / 8

123 4 5 6 7 8

下载PDF

与1PS79SB10115相关器件

型号	品牌	描述	获取价格	数据表
1PS79SB17	NEXPERIA	4 V, 30 mA low capacitance Schottky barrier diodeProduction	获取价格
1PS79SB17	NXP	4 V, 30 mA low Cd Schottky barrier diode	获取价格
1PS79SB17,115	NXP	暂无描述	获取价格
1PS79SB30	TYSEMI	Very Low forward voltage Very Low reverse current Guard ring protected	获取价格
1PS79SB30	KEXIN	Schottky barrier diode	获取价格
1PS79SB30	NXP	Schottky barrier diode	获取价格