Datasheet > 1PMT5920BE3

1PMT5920BE3

更新时间： 2024-11-14 07:25:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	119K
描述
Zener Diode, 6.2V V(Z), 5%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1PMT5920BE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-216
包装说明：	S-PSSO-G1	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.78
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	2 Ω	JEDEC-95代码：	DO-216AA
JESD-30 代码：	S-PSSO-G1	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	1	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	0.54 W	认证状态：	Not Qualified
标称参考电压：	6.2 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
最大电压容差：	5%	工作测试电流：	60.5 mA
Base Number Matches：	1

1PMT5920BE3 数据手册

1PMT5913Be3 thru 1PMT5956Be3

^TM

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This surface mountable 3.0 W Zener diode series in the JEDEC DO-216

package is similar in electrical features to the JEDEC registered 1N5913B

thru 1N5956B axial-leaded package for 3.3 to 200 V. It is an ideal selection

for applications requiring low profile and high-density mounting that are also

RoHS Compliant. When properly heat sunk, these zener diodes provide

power-handling capabilities only found in larger packages. In addition to its

size advantages, Powermite^®package features include a full metallic

bottom that eliminates the possibility of solder flux entrapment during

assembly, and a unique locking tab acts as an integral heat sink. Its

innovative design makes this device ideal for use with automatic insertion

equipment.

DO-216

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Very low profile surface mount package (1.1 mm)

Integral Heat Sink Locking Tabs

Compatible with automatic insertion equipment

Full metallic bottom eliminates flux entrapment

RoHS Compliant

Zener voltage 3.3 to 200 Volts

Low reverse leakage

Tight tolerance available

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 3.3 to 200 V

Flexible axial-lead mounting terminals

Nonsensitive to ESD

Moisture classification is Level 1 per IPC/JEDEC

J-STD-020B with no dry pack required

ESD Rating of >16kV per human body model

•

MAXIMUM RATINGS

Junction and storage temperatures: -55°C to +150°C

DC power dissipation: 3.0 watt with case bottom (TAB

1) ≤ 60°C (also see derating in Figure 1).

MECHANICAL AND PACKAGING

Terminals: Annealed matte-Tin plating over copper

and readily solderable per MIL-STD-750 method 2026

(consult factory for Tin-Lead plating)

Polarity: Cathode designated by TAB 1 (backside)

Case: Molded epoxy package meets UL94V-0

Marking: Last three numerical digits of part number

(see device marking code in Electrical Characteristics

table below with dot “•” suffix for RoHS Compliant)

Weight: 0.016 gram (approximate)

•

Forward voltage @200 mA: 1.2 volts (maximum)

Thermal Resistance: 30 ^ºC/W junction to Case bottom

(Tab 1), or 230^ºC/W junction to ambient when mounted

on FR4 PC board (1 oz Cu) with recommended

footprint (see last page).

•

Steady-State Power: 3.0 watts at T_C< 60^oC, or 0.54

watts at T_A= 25^ºC when mounted on FR4 PC board

and recommended footprint as described for thermal

resistance (see Figure 1 and last page)

Tape & Reel option: Standard per EIA-481-B

7 inch reel 3,000 pieces

13 inch reel 12,000 pieces

Solder Temperatures: 260 ^ºC for 10 s (max)

ELECTRICAL CHARACTERISTICS @ T_L= 30^oC

Zener

Test

Dynamic

Knee

Maximum

Reverse

Voltage

Maximum

Zener

Current

I_ZM

Voltage

Current

Impedance

Current Impedance Reverse

Current

I_ZK

Device

Marking

(4)

Microsemi

Number

V_Z

(1)

VOLTS

I_ZT

Z_ZT

(2)

OHMS

Z_ZK

I_R

V_R

(3)

OHMS

VOLTS

μAdc

100

1PMT5913B

1PMT5914B

1PMT5915B

1PMT5916B

1PMT5917B

1PMT5918B

1PMT5919B

1PMT5920B

913•

914•

915•

916•

917•

918•

919•

920•

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

113.6

104.2

96.1

87.2

79.8

73.5

66.9

60.5

9.0

7.5

6.0

5.0

4.0

2.0

1.0

500

350

250

200

1.0

1.5

2.0

3.0

4.0

749.1

686.4

633.6

547.2

526.4

481.8

432.3

397.7

6-19-2005 REV H

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1PMT5920BE3相关器件

型号	品牌	获取价格	描述	数据表
1PMT5920BE3/TR7	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 5%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLAS
1PMT5920BT1	ONSEMI	获取价格	3.2 Watt Plastic Surface Mount POWERMITE Package
1PMT5920BT1G	ONSEMI	获取价格	3.2 Watt Plastic Surface Mount POWERMITE Package
1PMT5920BT3	ONSEMI	获取价格	3.2 Watt Plastic Surface Mount POWERMITE Package
1PMT5920BT3	MOTOROLA	获取价格	PLASTIC SURFACE MOUNT ZENER DIODES 2.5 WATTS 3.3.91 VOLTS
1PMT5920BT3/D	ETC	获取价格	3.2 Watt Plastic Surface Mount POWERMITE? Package
1PMT5920BT3G	ONSEMI	获取价格	3.2 Watt Plastic Surface Mount POWERMITE Package
1PMT5920C/TR7	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 2%, 3W, Silicon, Unidirectional, DO-216AA, DO-216, 2 PIN
1PMT5920CE3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 2%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLAS
1PMT5920D	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 1%, 3W, Silicon, Unidirectional, DO-216AA, DO-216, 2 PIN

与1PMT5920BE3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

26
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

1PMT5920BE3

1PMT5920BE3 技术参数

1PMT5920BE3 数据手册

与1PMT5920BE3相关器件

与1PMT5920BE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1PMT5920BE3

1PMT5920BE3 技术参数

1PMT5920BE3 数据手册

与1PMT5920BE3相关器件

与1PMT5920BE3相关文章

您还可以找

您在本页遇到什么问题？