Datasheet > 1PMT4621DE3

1PMT4621DE3

更新时间： 2024-11-13 20:52:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
4页	113K
描述
Zener Diode, 3.6V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, DO-216, POWERMITE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1PMT4621DE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-216
包装说明：	S-PSSO-G1	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
其他特性：	LOW NOISE	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	1700 Ω
JEDEC-95代码：	DO-216AA	JESD-30 代码：	S-PSSO-G1
JESD-609代码：	e3	元件数量：	1
端子数量：	1	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Not Qualified	标称参考电压：	3.6 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
技术：	ZENER	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40	最大电压容差：	1%
工作测试电流：	0.25 mA	Base Number Matches：	1

1PMT4621DE3 数据手册

1PMT4614e3 thru 1PMT4627e3,

1PMT4099e3 thru 1PMT4135e3

POWERMITE^TM

Low Noise 1 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Microsemi Powermite^®surface mount low noise Zener package series

provides a higher power handling capability that are also RoHS compliant.

In addition to its size advantages, Powermite^®package features include a

full-metallic bottom that eliminates the possibility of solder flux entrapment

during assembly, and a unique locking tab acts as an efficient heat path

from die to mounting plane for external heat sinking with very low thermal

resistance junction to case (bottom). Its innovative design makes this

DO-216

device ideal for use with automatic insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount equivalent to JEDEC registered

1N4099 thru 1N4135 and 1N4614 thru 1N4627

series except with additional power capability

•

Extensive selection from 1.8 to 100 V

Regulates voltage over a broad operating current

and temperature range

•

RoHS compliant

•

Low noise density (1-3 kHz) at test current

Options for screening in accordance with Mil-PRF-

19500/435 for JAN, JANTX, JANTXV and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example,

designate MX1PMT4099 for a JANTX (consult factory

for Tin-Lead plating if required).

Optional 100% avionics screening available by

adding MA prefix for 100% temperature cycle,

thermal impedance, and 24 hour HTRB testing

(consult factory for Tin-Lead plating if required).

Low reverse leakage current

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively

Hermetically sealed surface mount package

Nonsensitive to ESD per MIL-STD-750 Method 1020

Compatible with automatic insertion equipment

•

Full metallic bottom eliminates flux entrapment

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating and Storage Temperatures: -55°C to +150°C

•

CASE: Void-free transfer molded thermosetting epoxy

compound meeting UL94V-0

FINISH: Annealed matte-Tin plating over copper and

readily solderable per MIL-STD-750 method 2026

(consult factory for Tin-Lead plating)

POLARITY: Cathode designated by Tab 1 (bottom)

MARKING: Three numerical digits of P/N and a dot

(see next page listing)

WEIGHT: 0.016 grams (approx.)

Package dimensions on last page

Tape & Reel option: Standard per EIA-481-B

3000 on 7 inch reel and 12,000 on 13” reel

Steady-State Power: 1.0 watt at T_C< 120^oC where

T_Cis case bottom temperature at mounting plane, or

0.5 watts at T_A= 30^ºC (ambient temperature) when

mounted on FR4 PC board as described for thermal

resistance (also see power deratings in Figure 1)

•

Thermal Resistance: 30°C/W junction to case

(bottom) and 240°C/W junction to ambient on FR4

PC board (1 oz copper) with recommended footprint

(see last page)

•

Forward voltage: 1.1 Volts @ 200 mA

Solder Temperatures: 260°C for 10 s (max)

5-06-2005 REV G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与1PMT4621DE3相关器件

型号	品牌	获取价格	描述	数据表
1PMT4621E3	MICROSEMI	获取价格	POWERMITETM Low Noise 1 Watt Zener Diodes
1PMT4622	MICROSEMI	获取价格	LOW NOISE 1 WATT Zener Diodes
1PMT4622/TR7	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, HERME
1PMT4622C	MICROSEMI	获取价格	Powermite LOW NOISE 1 WATT Zener Diodes
1PMT4622CE3	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLAST
1PMT4622D	MICROSEMI	获取价格	Powermite LOW NOISE 1 WATT Zener Diodes
1PMT4622DE3	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, DO-21
1PMT4622E3	MICROSEMI	获取价格	POWERMITETM Low Noise 1 Watt Zener Diodes
1PMT4623	MICROSEMI	获取价格	LOW NOISE 1 WATT Zener Diodes
1PMT4623/TR7	MICROSEMI	获取价格	Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, HERME

与1PMT4621DE3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

9
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

1PMT4621DE3

1PMT4621DE3 技术参数

1PMT4621DE3 数据手册

与1PMT4621DE3相关器件

与1PMT4621DE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1PMT4621DE3

1PMT4621DE3 技术参数

1PMT4621DE3 数据手册

与1PMT4621DE3相关器件

与1PMT4621DE3相关文章

您还可以找

您在本页遇到什么问题？