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1PMT33AT3 PDF预览

1PMT33AT3

更新时间： 2024-11-01 22:10:15
品牌 Logo 应用领域
安森美 - ONSEMI 二极管测试
页数 文件大小 规格书
6页 61K
描述
Zener Transient Voltage Suppressor POWERMITE Package

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中文翻译

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1PMT33AT3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-216AA包装说明：PLASTIC, CASE 457-04, POWERMITE, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.66Is Samacsys：N
最大击穿电压：40.6 V最小击穿电压：36.7 V
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-216AAJESD-30 代码：S-PSSO-G2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：200 W元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：33 V
最大重复峰值反向电压：33 V子类别：Voltage Reference Diodes
表面贴装：YES技术：ZENER
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
最大电压容差：5%工作测试电流：1 mA
Base Number Matches：1

1PMT33AT3 数据手册

 浏览型号1PMT33AT3的Datasheet PDF文件第2页浏览型号1PMT33AT3的Datasheet PDF文件第3页浏览型号1PMT33AT3的Datasheet PDF文件第4页浏览型号1PMT33AT3的Datasheet PDF文件第5页浏览型号1PMT33AT3的Datasheet PDF文件第6页 
1PMT5.0AT1/T3 Series  
Zener Transient  
Voltage Suppressor  
POWERMITE Package  
The 1PMT5.0AT1/T3 Series is designed to protect voltage  
sensitive components from high voltage, high energy transients.  
Excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The advanced packaging  
technique provides for a highly efficient micro miniature, space  
saving surface mount with its unique heat sink design. The  
POWERMITE has the same thermal performance as the SMA while  
being 50% smaller in footprint area, and delivering one of the lowest  
height profiles (1.1 mm) in the industry. Because of its small size, it is  
ideal for use in cellular phones, portable devices, business machines,  
power supplies and many other industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSOR  
5 − 58 V  
200 W PEAK POWER  
1
2
Specification Features:  
• Stand−off Voltage: 5 − 58 V  
• Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)  
− 175 W @ 1 ms (1PMT40A − 1PMT58A)  
1: CATHODE  
2: ANODE  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage  
• Response Time is Typically < 1 ns  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Low Profile − Maximum Height of 1.1 mm  
• Integral Heat Sink/Locking Tabs  
1
POWERMITE  
CASE 457  
PLASTIC  
2
MARKING DIAGRAM  
D
• Full Metallic Bottom Eliminates Flux Entrapment  
• Small Footprint − Footprint Area of 8.45 mm  
Mxx  
1
2
2
CATHODE  
ANODE  
• POWERMITE is JEDEC Registered as DO−216AA  
• Cathode Indicated by Polarity Band  
• Pb−Free Package is Available  
Mxx  
xx  
= Specific Device Code  
= 5 − 58  
= (See Table Next Page)  
= Date Code  
D
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
LEAD ORIENTATION IN TAPE:  
Cathode (Short) Lead to Sprocket Holes  
MOUNTING POSITION: Any  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
1PMT5.0AT1  
1PMT5.0AT3  
POWERMITE 3,000/Tape & Reel  
POWERMITE 12,000/Tape & Reel  
1PMT5.0AT3G POWERMITE 12,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 7  
1PMT5.0AT3/D  
123456

中文翻译

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1PMT33AT3 替代型号

型号 品牌 替代类型 描述 数据表
1PMT33AT3G ONSEMI

完全替代

 Zener Transient Voltage Suppressor POWERMITE Package
1PMT33AT1G ONSEMI

完全替代

 Zener Transient Voltage Suppressor POWERMITE Package
1PMT33AT1 ONSEMI

完全替代

 Zener Transient Voltage Suppressor POWERMITE Package

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1PMT4099 MICROSEMI

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1PMT4099/TR13 MICROSEMI

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 		Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, HERME
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