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1PMT16AT1G PDF预览

1PMT16AT1G

更新时间： 2024-01-09 14:57:59
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管测试
页数 文件大小 规格书
6页 65K
描述
Zener Transient Voltage Suppressor POWERMITE Package

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中文翻译

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1PMT16AT1G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：DO-216AA
包装说明：ROHS COMPLIANT, PLASTIC, CASE 457-04, POWERMITE, 2 PIN针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：7.76
Is Samacsys：N最大击穿电压：19.7 V
最小击穿电压：17.8 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-216AA
JESD-30 代码：S-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：200 W
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Not Qualified
标称参考电压：16 V最大重复峰值反向电压：16 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40最大电压容差：5%
工作测试电流：1 mABase Number Matches：1

1PMT16AT1G 数据手册

 浏览型号1PMT16AT1G的Datasheet PDF文件第2页浏览型号1PMT16AT1G的Datasheet PDF文件第3页浏览型号1PMT16AT1G的Datasheet PDF文件第4页浏览型号1PMT16AT1G的Datasheet PDF文件第5页浏览型号1PMT16AT1G的Datasheet PDF文件第6页 
1PMT5.0AT1/T3 Series  
Zener Transient  
Voltage Suppressor  
POWERMITE® Package  
The 1PMT5.0AT1/T3 Series is designed to protect voltage  
sensitive components from high voltage, high energy transients.  
Excellent clamping capability, high surge capability, low Zener  
impedance and fast response time. The advanced packaging  
technique provides for a highly efficient micro miniature, space  
saving surface mount with its unique heatsink design. The  
POWERMITE has the same thermal performance as the SMA while  
being 50% smaller in footprint area, and delivering one of the lowest  
height profiles (1.1 mm) in the industry. Because of its small size, it  
is ideal for use in cellular phones, portable devices, business  
machines, power supplies and many other industrial/consumer  
applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSOR  
5 − 58 V  
200 W PEAK POWER  
1
2
1: CATHODE  
2: ANODE  
Specification Features:  
• Stand−off Voltage: 5.0 V − 58 V  
• Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)  
− 175 W @ 1 ms (1PMT40A − 1PMT58A)  
• Maximum Clamp Voltage @ Peak Pulse Current  
1
POWERMITE  
CASE 457  
PLASTIC  
• Low Leakage  
2
• Response Time is Typically < 1 ns  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Low Profile − Maximum Height of 1.1 mm  
• Integral Heatsink/Locking Tabs  
MARKING DIAGRAM  
• Full Metallic Bottom Eliminates Flux Entrapment  
2
• Small Footprint − Footprint Area of 8.45 mm  
M
• POWERMITE is JEDEC Registered as DO−216AA  
• Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes  
• Cathode Indicated by Polarity Band  
MxxG  
1
2
CATHODE  
ANODE  
• Pb−Free Packages are Available  
M
= Date Code  
Mxx = Specific Device Code  
(See Table on Page 3)  
Mechanical Characteristics:  
G
= Pb−Free Package  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
ORDERING INFORMATION  
MOUNTING POSITION: Any  
†
Device  
Package  
Shipping  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
1PMTxxAT1  
POWERMITE 3,000/Tape & Reel  
1PMTxxAT1G POWERMITE 3,000/Tape & Reel  
(Pb−Free)  
1PMTxxAT3  
POWERMITE 12,000/Tape & Reel  
1PMTxxAT3G POWERMITE 12,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2005 − Rev. 9  
1PMT5.0AT3/D  
123456

中文翻译

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1PMT16AT1G 替代型号

型号 品牌 替代类型 描述 数据表
1PMT16AT3G ONSEMI

完全替代

 Zener Transient Voltage Suppressor POWERMITE Package
SM2T18A STMICROELECTRONICS

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