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1P1G66QDBVRG4Q1 PDF预览

1P1G66QDBVRG4Q1

更新时间: 2024-01-23 05:17:59
品牌 Logo 应用领域
德州仪器 - TI 开关光电二极管输出元件
页数 文件大小 规格书
11页 183K
描述
汽车类 5.5V、1:1 (SPST)、单通道模拟开关 | DBV | 5 | -40 to 125

1P1G66QDBVRG4Q1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:5
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.38
模拟集成电路 - 其他类型:SPST标称带宽:300 MHz
最大输入电压:5.5 V最小输入电压:
JESD-30 代码:R-PDSO-G5JESD-609代码:e4
长度:2.9 mm湿度敏感等级:1
正常位置:NO信道数量:1
功能数量:1端子数量:5
标称断态隔离度:42 dB最大通态电阻 (Ron):30 Ω
最高工作温度:125 °C最低工作温度:-40 °C
输出:COMMON OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:1.8/5 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.45 mm最大信号电流:0.1 A
子类别:Multiplexer or Switches最大供电电流 (Isup):0.5 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):2.3 V表面贴装:YES
最长断开时间:8.9 ns最长接通时间:9.5 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mmBase Number Matches:1

1P1G66QDBVRG4Q1 数据手册

 浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第1页浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第3页浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第4页浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第5页浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第6页浏览型号1P1G66QDBVRG4Q1的Datasheet PDF文件第7页 
ꢀ ꢁꢂ ꢃꢄꢅꢆ ꢇ ꢈꢉꢉ ꢊꢋꢇ  
ꢀ ꢌꢁ ꢈꢄ ꢍ ꢎ ꢌ ꢄ ꢏꢐ ꢍꢑ ꢏꢄ ꢏꢁ ꢏꢄ ꢒꢈ ꢀ ꢓꢌ ꢐ ꢆꢔ  
SCES499B − OCTOBER 2003 − REVISED JANUARY 2005  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 6.5 V  
CC  
Input voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 6.5 V  
I
Switch I/O voltage range, V (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to V  
+ 0.5 V  
I/O  
CC  
Control input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA  
IK  
I
I/O port diode current, I  
(V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA  
IOK I/O  
On-state switch current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Continuous current through V  
T
I/O  
CC  
CC  
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
Package thermal impedance, θ (see Note 2): DBV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206°C/W  
JA  
DCK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252°C/W  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C  
Storage temperature range, T  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltages are with respect to ground, unless otherwise specified.  
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
3. This value is limited to 5.5 V maximum.  
4. The package thermal impedance is calculated in accordance with JESD 51-7.  
recommended operating conditions (see Note 5)  
MIN  
1.65  
0
MAX  
UNIT  
V
V
V
Supply voltage  
I/O port voltage  
5.5  
CC  
V
CC  
V
I/O  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 1.65 V to 1.95 V  
= 2.3 V to 2.7 V  
= 3 V to 3.6 V  
V
× 0.65  
CC  
V
V
V
× 0.7  
× 0.7  
× 0.7  
CC  
CC  
CC  
V
High-level input voltage, control input  
V
IH  
= 4.5 V to 5.5 V  
= 1.65 V to 1.95 V  
= 2.3 V to 2.7 V  
= 3 V to 3.6 V  
V
× 0.35  
CC  
V
V
V
× 0.3  
× 0.3  
× 0.3  
5.5  
CC  
CC  
CC  
V
V
Low-level input voltage, control input  
Control input voltage  
V
V
IL  
= 4.5 V to 5.5 V  
0
I
V
CC  
V
CC  
V
CC  
V
CC  
= 1.65 V to 1.95 V  
= 2.3 V to 2.7 V  
= 3 V to 3.6 V  
20  
20  
t/v  
Input transition rise/fall time  
ns/V  
10  
= 4.5 V to 5.5 V  
10  
T
A
Operating free-air temperature  
−40  
125  
°C  
NOTE 5: All unused inputs of the device must be held at V  
or GND to ensure proper device operation. Refer to the TI application report,  
CC  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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