生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.12 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-34 |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大功率耗散: | 0.4 W |
认证状态: | Not Qualified | 标称参考电压: | 6.2 V |
表面贴装: | NO | 技术: | ZENER |
端子形式: | WIRE | 端子位置: | AXIAL |
电压温度Coeff-Max: | 0.31 mV/ °C | 工作测试电流: | 7.5 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N823A153 | NXP |
获取价格 |
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode | |
1N823A-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SEALED, GLAS | |
1N823A-1-PBF | DIGITRON |
获取价格 |
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7 | |
1N823A-1TR | MICROSEMI |
获取价格 |
暂无描述 | |
1N823A-2 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N823AD7 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 5%, 0.475W, Silicon | |
1N823AE3 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETIC SEALED, G | |
1N823A-PBF | DIGITRON |
获取价格 |
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7 | |
1N823ARL2 | MOTOROLA |
获取价格 |
Zener Diode, 6.2V V(Z), 5%, 0.4W, Silicon | |
1N823AT/R | NXP |
获取价格 |
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Vo |