Datasheet > 1N749

1N749

更新时间： 2024-11-04 03:54:51

品牌	Logo	应用领域
TRSYS		稳压二极管测试
页数	文件大小	规格书
2页	76K
描述
SILICON ZENER DIODES

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1N749 数据手册

Transys

Electronics

I M I T E D

SILICON ZENER DIODES

1N746 to 1N759

DO-35 400mW

Hermetically Sealed Glass Package Zener Diodes

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Zener Voltage

D C Power Dissipation

Derating Above 50 deg C

Operating & Storage Junction

Temperature Range

SYMBOL

VALUE

3.3 to 12

400

3.2

-65 to +175

UNIT

mW/deg C

deg C

Tj,Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified , VF <1.5V @ 200mA

Device Nominal*

Zener

Test

Current Impedance

IZT

(mA)

Maximum

Zener

Maximum

Reverse Current

VR Maximum

Zener

Typ

Temp

Coeff of Zener

Voltage *vz

(% deg C)

-0.066

Type#

(1)

Zener

Voltage

VZ @ IZT

(V)

@25 deg C

max

(uA)

@ +150 deg C

Current

IZM

Zzt @ IZT

max

(uA)

(Ohms)

(V)

1.0

(mA)

110

100

1N746

1N747

1N748

1N749

1N750

1N751

1N752

1N753

1N754

1N755

1N756

1N757

1N758

1N759

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

2.0

1.0

0.1

-0.058

-0.046

-0.033

-0.015

+-0.010

+0.030

+0.049

+0.053

+0.057

+0.060

+0.061

+0.062

0.1

Note(1) :- No Suffix +-10%

Suffix A +- 5%

* Pulse Condition : 20ms <tp 50ms, Duty Cycle<2%

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