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1N6467

更新时间： 2024-11-23 22:37:43
品牌 Logo 应用领域
商升特 - SEMTECH 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
2页 27K
描述
QPL 500 Watt Axial Leaded TVS

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中文翻译

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1N6467 技术参数

生命周期：Active包装说明：O-LALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：13 weeks风险等级：5.37
Is Samacsys：N其他特性：HIGH RELIABILITY
最小击穿电压：43.7 V击穿电压标称值：44 V
外壳连接：ISOLATED最大钳位电压：63.5 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LALF-W2
JESD-609代码：e2最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：3 W认证状态：Not Qualified
最大重复峰值反向电压：40.3 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：TIN COPPER端子形式：WIRE
端子位置：AXIALBase Number Matches：1

1N6467 数据手册

 浏览型号1N6467的Datasheet PDF文件第2页 
1N6461  
Thru  
QPL  
1N6468  
500 Watt Axial Leaded TVS  
TEL:805-498-2111 FAX:805-498-3804  
DESCRIPTION  
FEATURES:  
The 1N64xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices are  
constructed using a p-n junction TVS diode in a  
hermetically sealed, voidless glass package. The  
hermetically sealed package provides high reliability in  
harsh environmental conditions. TVS diodes are further  
characterized by their high surge capability, low operating  
and clamping voltages, and a theoretically instantaneous  
response time. This makes them ideal for use as board  
level protection for sensitive semiconductor components.  
These devices are DESC QPL qualified to  
·
·
·
·
·
·
500 Watts Peak Pulse Power (tp = 10/1000µs)  
Voidless hermetically sealed glass package  
Metallurgically bonded  
High surge capacity  
Unidirectional  
Available in JTX, and JTXV versions per  
MIL-S-19500/551  
MECHANICAL CHARACTERISTICS:  
·
·
·
Hermetically sealed glass package  
Tinned copper leads  
Marking : P/N, date code, logo, & cathode band  
MIL-S-19500/551.  
APPLICATIONS:  
·
·
·
·
·
Aerospace & Industrial Electronics  
Board Level Protection  
Airborne Systems  
Shipboard Systems  
Ground Systems  
MAXIMUM RATINGS  
RATING  
SYMBOL  
Ppk  
VALUE  
500  
UNIT  
Watts  
°C  
Peak Pulse Power (tp = 10 x 1000µs)  
Operating Temperature  
Tj  
-65 to +175  
-65 to +175  
3
Storage Temperature  
Tstg  
PD  
°C  
Steady-State Power Dissipation @ TL = 75ºC (3/8”)  
Watts  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)  
REVERSE  
STAND-OFF  
VOLTAGE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
CLAMPING  
VOLTAGE  
Vc @ Ipp  
PEAK PULSE  
CURRENT  
Ipp  
PEAK PULSE  
CURRENT  
Ipp  
TEMPERATURE  
COEFFICIENT  
REVERSE  
LEAKAGE  
CURRENT  
TEST  
CURRENT  
DEVICE  
TYPE  
OF V  
BR  
a Vz  
I
Tp = 1mS  
T
Tp = 20µS  
V
V
@ I  
BR T  
RWM  
I
R
(V)  
(µA)  
(V)  
(mA)  
(V)  
(A)  
(A)  
% /°C  
1N6461  
1N6462  
1N6463  
1N6464  
1N6465  
1N6466  
1N6467  
1N6468  
5
6
12  
15  
24  
30.5  
40.3  
51.6  
3000  
2500  
500  
500  
50  
3
2
2
5.6  
6.5  
25  
20  
5
5
2
1
1
1
9.0  
56  
46  
22  
19  
12  
11  
8
315  
258  
125  
107  
69  
63  
45  
35  
0.040  
0.040  
0.050  
0.060  
0.084  
0.093  
0.094  
0.096  
11.0  
22.6  
26.5  
41.4  
47.5  
63.5  
78.5  
13.6  
16.4  
27.0  
33.0  
43.7  
54.0  
6
© 1997 SEMTECH CORP.  
652 MITCHELL ROAD NEWBURY PARK CA 91320  
12

中文翻译

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1N6467 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N6467 SEMTECH

类似代替

 Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon
JANTX1N6467 SEMTECH

类似代替

 Trans Voltage Suppressor Diode, 500W, 40V V(RWM), Unidirectional, 1 Element, Silicon, HERM

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1N6468US MICROSEMI

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