5秒后页面跳转
1N6380G PDF预览

1N6380G

更新时间: 2024-02-29 12:23:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

1N6380G 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.83二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE

1N6380G 数据手册

 浏览型号1N6380G的Datasheet PDF文件第1页浏览型号1N6380G的Datasheet PDF文件第2页浏览型号1N6380G的Datasheet PDF文件第4页浏览型号1N6380G的Datasheet PDF文件第5页浏览型号1N6380G的Datasheet PDF文件第6页浏览型号1N6380G的Datasheet PDF文件第7页 
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)  
A
F
F
Breakdown Voltage  
V
C
@ I (Note 6)  
V (Volts) (Note 6)  
C
PP  
V
I
V
@
RWM  
R
JEDEC  
Device  
)
(Note 4)  
V
(Note 5 (Volts)  
@ I  
V
C
I
PP  
QV  
RWM  
BR  
T
BR  
Device  
@ I  
=
@ I  
=
PP  
PP  
Marking  
(Volts)  
(mA)  
300  
25  
Min  
Nom  
Max  
(mA)  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
(Volts)  
(A)  
160  
100  
90  
1 A  
10 A  
(mV/°C)  
4.0  
8.0  
12  
(ON Device)  
1N6373, G  
(MPTE−5, G)  
1N6373  
MPTE−5  
5.0  
8.0  
10  
12  
15  
22  
36  
45  
6.0  
9.4  
7.1  
7.5  
1N6374, G  
(MPTE−8, G)  
1N6374  
MPTE−8  
9.4  
15  
11.3  
13.7  
16.1  
20.1  
29.8  
50.6  
63.3  
11.5  
14.1  
16.5  
20.6  
32  
1N6375, G  
1N6375  
(MPTE−10,G) MPTE−10  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
11.7  
14.1  
17.6  
25.9  
42.4  
52.9  
16.7  
21.2  
25  
1N6376, G  
1N6376  
(MPTE−12, G) MPTE−12  
70  
14  
1N6377, G  
1N6377  
(MPTE−15, G) MPTE−15  
60  
18  
1N6379, G  
1N6379  
(MPTE−22, G) MPTE−22  
37.5  
65.2  
78.9  
40  
26  
1N6380, G  
1N6380  
(MPTE−36, G) MPTE−36  
23  
54.3  
50  
1N6381, G  
1N6381  
(MPTE−45, G) MPTE−45  
19  
70  
60  
ICTE−5, G  
ICTE−10, G  
ICTE−12, G  
ICTE−5  
ICTE−10  
ICTE−12  
5.0  
10  
12  
300  
2.0  
2.0  
6.0  
11.7  
14.1  
1.0  
1.0  
1.0  
9.4  
160  
90  
7.1  
7.5  
4.0  
8.0  
12  
16.7  
21.2  
13.7  
16.1  
14.1  
16.5  
70  
ICTE−15, G  
ICTE−18, G  
ICTE−22, G  
ICTE−36, G  
ICTE−15  
ICTE−18  
ICTE−22  
ICTE−36  
15  
18  
22  
36  
2.0  
2.0  
2.0  
2.0  
17.6  
21.2  
25.9  
42.4  
1.0  
1.0  
1.0  
1.0  
25  
30  
60  
50  
40  
23  
20.1  
24.2  
29.8  
50.6  
20.6  
25.2  
32  
14  
18  
21  
26  
37.5  
65.2  
54.3  
3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.  
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V  
), which should be equal to or  
RWM  
greater than the dc or continuous peak operating voltage level.  
5. V measured at pulse test current I at an ambient temperature of 25°C and minimum voltage in V is to be controlled.  
BR  
T
BR  
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.  
†The “G’’ suffix indicates Pb−Free package available.  
http://onsemi.com  
3
 

与1N6380G相关器件

型号 品牌 描述 获取价格 数据表
1N6380LEADFREE CENTRAL Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

获取价格

1N6380MPTE-36 MICROSEMI Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon

获取价格

1N6380RL4 ONSEMI 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

获取价格

1N6380RL4G ONSEMI 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

获取价格

1N6380TRE3 MICROSEMI Trans Voltage Suppressor Diode, 36V V(RWM), Unidirectional,

获取价格

1N6381 NJSEMI 1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO

获取价格