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1N6366TR PDF预览

1N6366TR

更新时间: 2024-09-19 13:03:43
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 93K
描述
Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN

1N6366TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-13
包装说明:O-MALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.55
最小击穿电压:11.7 V击穿电压标称值:11.7 V
外壳连接:CATHODE最大钳位电压:14.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-202AA
JESD-30 代码:O-MALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:10 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6366TR 数据手册

 浏览型号1N6366TR的Datasheet PDF文件第2页 

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