是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-13 |
包装说明: | O-MALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.55 |
最小击穿电压: | 11.7 V | 击穿电压标称值: | 11.7 V |
外壳连接: | CATHODE | 最大钳位电压: | 14.5 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-202AA |
JESD-30 代码: | O-MALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 10 V | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6366TRE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional, | |
1N6367 | LITTELFUSE |
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Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
1N6367 | PROTEC |
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Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon | |
1N6367 | DIGITRON |
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Transient Voltage Suppressor, Bi-directional; Max Peak Repetitive Reverse Voltage: 1500; M | |
1N6367 | MICROSEMI |
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TRANSIENT ABSORPTION ZENER | |
1N6367C | MICROSEMI |
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Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional, | |
1N6367CE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional, | |
1N6367CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional, | |
1N6367CTRE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional, | |
1N6367E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |