Unidirectional and Bidirectional
GENERAL DATA IS APPLICABLE TO ALL
SERIES IN THIS GROUP
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are ON
Semiconductor’s exclusive, cost-effective, highly reliable Surmetic
axial leaded package and are ideally-suited for use in communication
systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other
industrial/consumer applications, to protect CMOS, MOS and Bipolar
integrated circuits.
MOSORB ZENER TVS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
Specification Features:
• Standard Voltage Range — 6.2 to 250 V
• Peak Power — 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL Recognition
PLASTIC
CASE 41A
• Response Time is Typically < 1 ns
ORDERING INFORMATION
Device
1.5KEXXXA
Package
CASE 41A
CASE 41A
Shipping
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
POLARITY: Cathode indicated by polarity band. When operated in
zener mode, will be positive with respect to anode
MOUNTING POSITION: Any
500 Units/Box
1.5KEXXXARL4
Tape and Reel
1500 Units/Reel
1.5KEXXXCA
Bidirectional
CASE 41A
500 Units/Box
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico
1.5KEXXXCARL4 CASE 41A
Bidirectional
Tape and Reel
1500 Units/Reel
1N6XXXA
CASE 41A
CASE 41A
500 Units/Box
MAXIMUM RATINGS
1N6XXXARL
Tape and Reel
1500 Units/Reel
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
P
PK
1500
Watts
@ T ≤ 25°C
L
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Steady State Power Dissipation
P
D
5
Watts
@ T ≤ 75°C, Lead Length = 3/8″
L
Derated above T = 75°C
50
mW/°C
L
Forward Surge Current (2)
I
200
Amps
FSM
@ T = 25°C
A
Operating and Storage Temperature
Range
T , T
J stg
– 65 to
+175
°C
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
maximum.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
December, 1999 – Rev. 2
1N6267A/D