Datasheet > 1N6287C-E3

1N6287C-E3

更新时间： 2024-11-29 18:00:23

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	170K
描述
Trans Voltage Suppressor Diode, 38.1V V(RWM), Bidirectional,

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技术参数
数据手册

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1N6287C-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.83
击穿电压标称值：	47 V	最大钳位电压：	67.8 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
极性：	BIDIRECTIONAL	最大重复峰值反向电压：	38.1 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

1N6287C-E3 数据手册

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303

Vishay Semiconductors

TRANSZORB Transient Voltage Suppressors

Major Ratings and Characteristics

V_(BR)Unidirectional

6.8 V to 540 V

6.8 v to 440 V

1500 W

_(BR)Bidirectional

P_PPM

P_M(AV)

6.5 W

_FSM(Unidirectional only)

T_jmax.

200 A

175 °C

Case Style 1.5KE

Features

• Glass passivated chip junction

• Available in Unidrectional and Bidirectional

• 1500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

• Very fast response time

Mechanical Data

Case: Molded plastic body over passivated junction

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and MIL-STD-750, Method

2026

Polarity: For unidirectional types the color band

denotes cathode end, no marking on bidirectional

types

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C

• AEC-Q101 qualified

Typical Applications

Use in sensitive electronics protection against voltage

Devices for bidirection Applications

transients induced by inductive load switching and For bidirectional types, use C or CA suffix for types

lighting on ICs, MOSFET, signal lines of sensor units (e.g. 1.5KE440CA).

for consumer, computer, industrial, automotive, and

Telecommunication

Electrical characteristics apply in both directions.

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

P_PPM

Limit

1500

Unit

Peak pulse power dissipation with a 10/1000 µs waveform^{(1) (Fig. 1)}

Peak pulse current with a 10/1000 µs waveform⁽¹⁾

Steady state power dissipation lead lengths 0.375“ (9.5 mm)⁽²⁾

T_L= 75 °C

I_PPM

See Next Table

6.5

P_M(AV)

Peak forward surge current 8.3 ms single half sine-wave unidirectional

only⁽³⁾

I_FSM

200

Maximum instantaneous forward voltage at 100 A for unidirectional only⁽⁴⁾

Operating junction and storage temperature range

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5

(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(4) V_F= 3.5 V for 1.5KE220(A) & below; V_F= 5.0 V for 1.5KE250(A) & above

Document Number 88301

03-Mar-05

www.vishay.com

12 3 4 5 6 7

中文翻译

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与1N6287C-E3相关器件

型号	品牌	获取价格	描述	数据表
1N6287C-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 38.1V V(RWM), Bidirectional,
1N6287CHE3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 38.1V V(RWM), Bidirectional, 1 Element, Silicon, RO
1N6287CHE3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 38.1V V(RWM), Bidirectional,
1N6287CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
1N6287CL	EIC	获取价格	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N6287COX.120	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon,
1N6287COX.160	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon,
1N6287CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 38.1V V(RWM), Bidirectional,
1N6287E3	MICROSEMI	获取价格	Unidirectional & Bidirectional Transient Voltage Suppressors
1N6287-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 38.1V V(RWM), Unidirectional, 1 Element, Silicon, R

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