1N6279CHE3

更新时间： 2024-11-23 08:15:07

品牌	Logo	应用领域
威世 - VISHAY		二极管瞬态抑制器
页数	文件大小	规格书
7页	118K
描述
Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN

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1N6279CHE3 数据手册

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder Dip 260 °C, 40 seconds

Case Style 1.5KE

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_BRuni-directional

6.8 V to 540 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

_BRbi-directional

6.8 V to 440 V

1500 W

6.5 W

P_PPM

P_D

_FSM(uni-directional only)

T_Jmax.

200 A

175 °C

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use

(e.g. 1.5KE440CA).

or CA suffix

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

P_PPM

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

I_PPM

P_D

See next table

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

6.5

200

(2)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Maximum instantaneous forward voltage at 100 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for 1.5KE220 (A) and below; V_F= 5.0 V for 1.5KE250(A) and above

www.vishay.com

106

Document Number: 88301

Revision: 20-Sep-07

12 3 4 5 6 7

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与1N6279CHE3相关器件

型号	品牌	获取价格	描述	数据表
1N6279CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
1N6279CL	EIC	获取价格	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N6279CPBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
1N6279CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 17.8V V(RWM), Bidirectional,
1N6279E3	MICROSEMI	获取价格	Unidirectional & Bidirectional Transient Voltage Suppressors
1N6279-E3/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon,
1N6279-E3/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6279-E3/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6279-E3/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6279-E3/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, P

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