1N6279E3TR

更新时间： 2024-11-22 13:03:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管局域网
页数	文件大小	规格书
5页	206K
描述
Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N6279E3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.1
最大击穿电压：	24.2 V	最小击穿电压：	19.8 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.52 W
认证状态：	Not Qualified	最大重复峰值反向电压：	17.8 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N6279E3TR 数据手册

1N6267 thru 1N6303A, e3

1.5KE6.8 thru 1.5KE400CA, e3

Unidirectional & Bidirectional

Transient Voltage Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A

are JEDEC registered selections for unidirectional devices. The popular series of

1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range

and also provides bidirectional options with a C or CA suffix. All have the same

high Peak Pulse Power rating of 1500 W and extremely fast response time. They

can protect from secondary lightning effects per IEC61000-4-5 and class levels

described herein as well as inductive switching environments and induced RF

protection. Since their response time is virtually instantaneous, they can also

protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

CASE 1

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical TVS series for thru-hole mounting

• Protection from switching transients and induced RF

Available in both Unidirectional and Bidirectional

(1.5KE series add C or CA suffix for Bidirectional)

• Protection from ESD and EFT per IEC 61000-4-2 and

IEC 61000-4-4 with fast response

•

Voltages from 6.8 to 400 V Breakdown (V_BR

)

• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Suppresses transients up to 1500 watts @ 10/1000 µs

Class 1: 1.5KE6.8A to 1.5KE200A or CA *

Class 2: 1.5KE5.0A to 1.5KE180A or CA *

Class 3: 1.5KE5.0A to 1.5KE91A or CA *

Class 4: 1.5KE5.0A to 1.5KE43A or CA *

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

•

Options for screening in accordance with MIL-PRF-

19500 for JANTX are also available by adding MX

prefix to the part number.

Class 1 : 1.5KE5.0A to 1.5KE110A or CA *

Class 2: 1.5KE5.0A to 1.5KE56A or CA *

Class 3: 1.5KE5.0A to 1.5KE27A or CA *

Class 4: 1.5KE5.0A to 1.5KE13A or CA *

Surface mount equivalent packages are available as

SMCJ5.0 - SMCJ170CA or SMCG5.0 - SMCG170CA

(consult factory for other surface mount options)

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Class 2: 1.5KE5.0A to 1.5KE24A or CA *

Class 3: 1.5KE5.0 to 1.5KE12A or CA *

RoHS Compliant devices available by adding “e3” suffix

* Also applies to 1N5908 and 1Nxxxx of same voltage

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 1500 watts at

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

10/1000 μs (also see Fig 1,2, and 3)

•

Impulse repetition rate (duty factor): 0.01%

FINISH: Tin-lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65^ºC to +150^ºC

POLARITY: Cathode indicated by band. No

marking on bidirectional devices

•

Thermal Resistance: 22^ºC/W junction to lead at 3/8 inch

(10 mm) from body, or 82^ºC/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads

(1oz) and track width 1 mm, length 25 mm

Steady-State Power dissipation: 5 watts at T_L= 40^oC,

or 1.52 watts at T_A= 25^ºC when mounted on FR4 PC

board described for thermal resistance

•

MARKING: Part number

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 1.5 grams (approximate)

See package dimensions on last page

•

Forward Surge: 200 Amps peak impulse of 8.3 ms half-

sine wave at 25ºC (unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

11-03-2009 Rev G; SA4-15

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4 5

中文翻译

下载PDF

与1N6279E3TR相关器件

型号	品牌	获取价格	描述	数据表
1N6279HE3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 17.8V V(RWM), Unidirectional,
1N6279-HE3/54	VISHAY	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
1N6279HR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
1N6279L	EIC	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
1N6279TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6279TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 17.8V V(RWM), Unidirectional,
1N6279US	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2
1N627A	ETC	获取价格	silicon diode
1N628	ETC	获取价格	silicon diode
1N6280	SSDI	获取价格	Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, P

与1N6279E3TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

32
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

24
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

53
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

51

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6279E3TR

1N6279E3TR 技术参数

1N6279E3TR 数据手册

与1N6279E3TR相关器件

与1N6279E3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6279E3TR

1N6279E3TR 技术参数

1N6279E3TR 数据手册

与1N6279E3TR相关器件

与1N6279E3TR相关文章

您还可以找

您在本页遇到什么问题？